FDC2512 반도체 회로 부품 판매점
150V N-Channel PowerTrench MOSFET
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 Fairchild Semiconductor |
February 2002
FDC2512
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 1.4 A, 150 V.
RDS(ON) = 425 mΩ @ VGS = 10 V
RDS(ON) = 475 mΩ @ VGS = 6 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (8nC typ)
• High power and current handling capability
• Fast switching speed
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.252
FDC2512
7’’
Ratings
150
± 20
1.4
8
1.6
0.8
−55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDC2512 Rev B3 (W)
Electrical Characteristics
Symbl
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, I D = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 120 V,
VGS = 20 V,
VGS = –20 V ,
VGS = 0 V
VDS = 0 V
VDS = 0 V
150 V
147 mV/°C
1
100
–100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
2 2.6
4
V
–5.6 mV/°C
VGS = 10 V, ID = 1.4 A
VGS = 6.0 V, ID = 1.3 A
VGS = 10 V, ID = 1.4 A, TJ = 125°C
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 1.4 A
4
319 425
332 475
624 875
4
mΩ
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 75 V,
f = 1.0 MHz
V GS = 0 V,
344 pF
22 pF
9 pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 75 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 75 V,
VGS = 10 V
ID = 1.4 A,
6.5 13
3.5 7
22 33
48
8 11
1.5
2.3
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
1.3 A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A (Note 2)
0.8 1.2
V
trr
Diode Reverse Recovery Time
IF = 1.4A,
45.8 nS
Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs (Note 2)
119
nC
Notes:
1.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 156°C/W when mounted
on a minimum pad of 2 oz
copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Scale 1 : 1 on letter size paper
FDC2512 Rev B3(W)
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FDC2512 mosfet
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