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FK16VS-5 반도체 회로 부품 판매점

Nch POWER MOSFET HIGH-SPEED SWITCHING USE



Powerex Power Semiconductors 로고
Powerex Power Semiconductors
FK16VS-5 데이터시트, 핀배열, 회로
FK16VS-5
MITSUBISHI Nch POWER MOSFET
FK16VS-5
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
r 10.5MAX.
Dimensions in mm
4.5
1.3
1
5
0.8
0
+0.3
–0
0.5
¡VDSS ................................................................................ 250V
¡rDS (ON) (MAX) .............................................................. 0.31
¡ID ......................................................................................... 16A
¡Integrated Fast Recovery Diode (MAX.) ........150ns
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
qwe
wr
q GATE
q w DRAIN
e SOURCE
r DRAIN
e
TO-220S
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
Conditions
Ratings
250
±30
16
48
16
48
125
–55 ~ +150
–55 ~ +150
1.2
Unit
V
V
A
A
A
A
W
°C
°C
g
Feb.1999


FK16VS-5 데이터시트, 핀배열, 회로
MITSUBISHI Nch POWER MOSFET
FK16VS-5
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 250V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 8A, VGS = 10V
ID = 8A, VGS = 10V
ID = 8A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50
IS = 8A, VGS = 0V
Channel to case
IS = 16A, dis/dt = –100A/µs
Limits
Unit
Min. Typ. Max.
250 —
—V
±30 —
—V
— — ±10 µA
——
1 mA
2 3 4V
0.24
0.31
1.92 2.48
V
6.5 10.0 —
S
— 1050 — pF
— 220 — pF
— 45 — pF
— 20 — ns
— 40 — ns
— 110 — ns
— 50 — ns
— 1.5 2.0 V
— — 1.00 °C/W
— — 150 ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
102
7
5
3 tw=10µs
2
100µs
101
7
5 1ms
3
2
100
7
5 TC = 25°C
3 Single Pulse
2
10ms
DC
10–1
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999




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FK16VS-5 mosfet

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