파트넘버.co.kr 2SK1066 데이터시트 PDF


2SK1066 반도체 회로 부품 판매점

N-Channel Junction Silicon FET



Sanyo Semicon Device 로고
Sanyo Semicon Device
2SK1066 데이터시트, 핀배열, 회로
Ordering number:EN2747
N-Channel Junction Silicon FET
2SK1066
High-Frequency
General-Purpose Amplifier Applications
Applications
· High-frequency general-purpose amplifier.
· AM tuner RF amplifier.
· Low-noise amplifier.
Features
· Large yfs.
· Small Crss.
· Ultralow noise figure.
· Ultrasmall-sized package permitting 2SK1066-
applied sets to be made smaller and slimmer.
Package Dimensions
unit:mm
2058
[2SK1066]
0.3
3
0.15
0 to 0.1
12
0.65 0.65
2.0
0.3 0.6
0.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=–10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=–10V, VDS=0
Zero-Gate Voltage Drain Current
IDSS VDS=5V, VGS=0
Cutoff Voltage
VGS(off) VDS=5V, ID=100µA
Forward Transfer Admittance
| yfs | VDS=5V, VGS=0, f=1kHz
* : The 2SK1066 is classified by IDSS as follows (unit : mA) :
3.5 20 6.0 5.0 21 8.5 7.3 22 12.0
(Note) Marking : A
IDSS rank : 20, 21, 22
• For CP package version, use the 2SK436.
1 : Source
2 : Drain
3 : Gate
SANYO : MCP
Ratings
15
–15
10
20
150
150
–55 to +150
Unit
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ max
Unit
–15 V
–1.0 nA
3.5* 12.0* mA
–0.2 –0.5 –1.5 V
10 17
mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51099TH (KT)/4298TA, TS No.2747–1/7


2SK1066 데이터시트, 핀배열, 회로
Continued from preceding page.
Parameter
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
2SK1066
Symbol
Ciss
Crss
NF
Conditions
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, Rg=1k, ID=1mA, f=1kHz
Ratings
7.0
2.0
1.5
Unit
pF
pF
dB
No.2747–2/7




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2SK1066 mosfet

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