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PDF 2SK1065 Data sheet ( Hoja de datos )

Número de pieza 2SK1065
Descripción N-Channel Junction Silicon FET
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



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No Preview Available ! 2SK1065 Hoja de datos, Descripción, Manual

Ordering number:ENN2746A
N-Channel Junction Silicon FET
2SK1065
High-Frequency
General-Purpose Amplifier Applications
Features
· Ultrasmall package facilitates miniaturization in end
products.
· Small Crss (Crss=0.04pF typ).
Package Dimensions
unit:mm
2057A
[2SK1065]
0.3
3
0.15
0 to 0.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
12
0.65 0.65
2.0
0.3 0.6
0.9
1 : Gate
2 : Drain
3 : Source
SANYO : MCP
Conditions
Ratings
–20
10
20
150
150
–55 to +150
Unit
V
mA
mA
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDO IG=–10µA
Gate-to-Source Leakage Current
IGSS VGS=–0.5V, VDS=0
Zero-Gate Voltage Drain Current
IDSS VDS=5V, VGS=0
Cutoff Voltage
VGS(off) VDS=5V, ID=10µA
Forward Transfer Admittance
| yfs |1
| yfs |2
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=100MHz
* : The 2SK1065 is classified by IDSS as follows (unit : mA) :
IDSS rank
3
4
5
IDSS
1.2 to 3.0 2.5 to 6.0 5.0 to 12.0
(Note) Marking : T
• For CP package version, use the 2SK242.
Ratings
min typ max
Unit
–20 V
–10 nA
1.2* 12.0* mA
–0.4 –1.3 –2.5 V
2.4 6.0
mS
2.4 6.0
mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83100TS (KOTO)/51099TH (KT)/4298TA, TS No.2746–1/4

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