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Hitachi Semiconductor |
2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
2SK1056, 2SK1057, 2SK1058
Outline
TO-3P
D
G1
2
3
1. Gate
2. Source
(Flange)
S
3. Drain
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1056
2SK1057
2SK1058
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VDSX
VGSS
ID
I DR
Pch*1
Tch
Tstg
Ratings
120
140
160
±15
7
7
100
150
–55 to +150
Unit
V
V
A
A
W
°C
°C
2
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