파트넘버.co.kr 2SJ189 데이터시트 PDF


2SJ189 반도체 회로 부품 판매점

P-Channel Silicon MOSFET



Sanyo Semicon Device 로고
Sanyo Semicon Device
2SJ189 데이터시트, 핀배열, 회로
Ordering number:EN3762A
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
P-Channel Silicon MOSFET
2SJ189
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2083B
[2SJ189]
6.5
5.0
4
2.3
0.5
unit:mm
2092B
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5 1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
[2SJ189]
6.5 2.3
5.0 0.5
4
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31599TH (KT)/42893TH/N1292MH (KOTO) 8-7540, 7921 No.3762–1/4


2SJ189 데이터시트, 핀배열, 회로
2SJ189
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW10µs, duty cycle1%
Tc=25˚C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=–1mA, VGS=0
IG=±100µA, VDS=0
VDS=–30V, VGS=0
VGS=±12V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–2A
ID=–2A, VGS=–10V
ID=–2A, VGS=–4V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=–4A, VGS=0
Switching Time Test Circuit
Ratings
–30
±15
–4
–16
30
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Ratings
min typ
–30
±15
–1.0
2.5
4
85
120
1000
600
220
15
50
145
145
–1.0
max
–100
±10
–2.0
120
170
–1.5
Unit
V
V
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
V
No.3762–2/4




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2SJ189 mosfet

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