2SJ187 반도체 회로 부품 판매점
P-Channel Silicon MOSFET
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 Sanyo Semicon Device |
Ordering number:EN3509A
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
P-Channel Silicon MOSFET
2SJ187
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2062A
[2SJ187]
4.5
1.6
1.5
0.4 0.5
32
1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Tc=25˚C
Mounted on ceramic board (250mm2× 0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Marking : JA
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
RDS(on)
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±12V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–500mA
ID=–500mA, VGS=–10V
ID=–500mA, VGS=–4V
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
Ratings
–30
±15
–1
–4
3.5
1.5
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
–30 V
–100 µA
±10 µA
–1.0 –2.0 V
0.6 1.0
S
0.5 0.75 Ω
0.75 1.1 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31599TH (KT)/N1292MH (KOTO) X-6951, 7305 No.3509–1/4
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Switching Time Test Circuit
2SJ187
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=–1A, VGS=0
Ratings
min typ max
170
110
20
10
13
70
30
–0.9
Unit
pF
pF
pF
ns
ns
ns
ns
V
No.3509–2/4
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2SJ187 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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