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PDF HP4936DY Data sheet ( Hoja de datos )

Número de pieza HP4936DY
Descripción 5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! HP4936DY Hoja de datos, Descripción, Manual

Data Sheet
December 2001
HP4936DY
5.8A, 30V, 0.037 Ohm, Dual N-Channel,
Logic Level Power MOSFET
This power MOSFET is manufactured using an innovative
process. This advanced process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HP4936DY
SO-8
P4936DY
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HP4936DYT.
Features
• Logic Level Gate Drive
• 5.8A, 30V
• rDS(ON) = 0.037at ID = 5.8A, VGS = 10V
• rDS(ON) = 0.055at ID = 4.7A, VGS = 4.5V
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
S1(1)
G1(2)
D1(8)
D1(7)
S2(3)
G2(4)
D2(6)
D2(5)
Packaging
SO-8
©2001 Fairchild Semiconductor Corporation
HP4936DY Rev. B

1 page




HP4936DY pdf
Test Circuits and Waveforms
HP4936DY
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 12. SWITCHING TIME TEST CIRCUIT
VDS
RL
VGS
Ig(REF)
DUT
+
VDD
-
FIGURE 14. GATE CHARGE TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 13. SWITCHING TIME WAVEFORM
VDD
Qgs
0
Qgd
Qg
VGS
VDS
Ig(REF)
0
FIGURE 15. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HP4936DY Rev. B

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