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HUFA76629D3S 반도체 회로 부품 판매점

20A/ 100V/ 0.054 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
HUFA76629D3S 데이터시트, 핀배열, 회로
Data Sheet
HUFA76629D3, HUFA76629D3S
January 2002
20A, 100V, 0.054 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
HUFA76629D3
GATE
SOURCE
DRAIN
(FLANGE)
HUFA76629D3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.052Ω, VGS = 10V
- rDS(ON) = 0.054Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electriecal Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76629D3
TO-251AA
76629D
HUFA76629D3S
TO-252AA
76629D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76629D3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA76629D3, HUFA76629D3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TC = 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous
Continuous
Continuous
(TC
(TC
(TC
=
=
=
11200500oCooCC, ,,VVVGGGSSS===1054VV.5))V()F.(i.gF.uig.rue.r.e2.)2. )..
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ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±16
20
20
20
20
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
110
0.74
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation
HUFA76629D3, HUFA76629D3S Rev. B


HUFA76629D3S 데이터시트, 핀배열, 회로
HUFA76629D3, HUFA76629D3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 12)
ID = 250µA, VGS = 0V , TC = -40oC (Figure 12)
VDS = 95V, VGS = 0V
VDS = 90V, VGS = 0V, TC = 150oC
VGS = ±16V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 11)
ID = 20A, VGS = 10V (Figures 9, 10)
ID = 20A, VGS = 5V (Figure 9)
ID = 20A, VGS = 4.5V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
RθJA
TO-251AA and TO-252AA
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDD = 50V, ID = 20A
VGS = 4.5V, RGS = 6.8
(Figures 15, 21, 22)
VDD = 50V, ID = 20A
VGS = 10V,RGS = 8.2
(Figures 16, 21, 22)
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 50V,
ID = 20A,
Ig(REF) = 1.0mA
(Figures 14, 19, 20)
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 20A
ISD = 10A
ISD = 20A, dISD/dt = 100A/µs
ISD = 20A, dISD/dt = 100A/µs
©2002 Fairchild Semiconductor Corporation
MIN TYP MAX UNITS
100 - - V
90 - - V
- - 1 µA
- - 250 µA
- - ±100 nA
1 - 3V
- 0.0415 0.052
-
0.046 0.054
-
0.047 0.055
- - 1.36 oC/W
- - 100 oC/W
- - 190 ns
- 11 - ns
- 114 -
ns
- 38 - ns
- 60 - ns
- - 145 ns
- - 50 ns
- 6.8 - ns
- 28 - ns
- 67 - ns
- 60 - ns
- - 190 ns
- 38 46 nC
- 21 25 nC
- 1.2 1.6 nC
- 3.3 - nC
- 10 - nC
- 1285 -
- 270 -
- 65 -
pF
pF
pF
MIN TYP MAX UNITS
-
-
1.25
V
-
-
1.00
V
- - 110 ns
- - 370 nC
HUFA76629D3, HUFA76629D3S Rev. B




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HUFA76629D3S mosfet

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관련 데이터시트


HUFA76629D3

20A/ 100V/ 0.054 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET - Fairchild Semiconductor



HUFA76629D3S

20A/ 100V/ 0.054 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET - Fairchild Semiconductor