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PDF HUFA76423D3S Data sheet ( Hoja de datos )
| Número de pieza | HUFA76423D3S | |
| Descripción | 20A/ 60V/ 0.037 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
HUFA76423D3, HUFA76423D3S
December 2001
20A, 60V, 0.037 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFETs
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
HUFA76423D3
DRAIN
(FLANGE)
GATE
SOURCE
HUFA76423D3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.032Ω, VGS = 10V
- rDS(ON) = 0.037Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76423D3
TO-251AA
76423D
HUFA76423D3S
TO-252AA
76423D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76423D3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA76423D3,
HUFA76423D3S
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (TC = 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous
Continuous
(TC
(TC
=
=
100oC,
100oC,
VGS
VGS
=
=
5V) . . . . . . . . . .
4.5V) (Figure 2)
.
.
.
.
.
.
......
......
....
....
.
.
....
....
....
....
....
....
....
....
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
60
60
±16
20
20
20
20
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and StorageTemperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
85
0.567
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA76423D3, HUFA76423D3S Rev. B
1 page  
HUFA76423D3, HUFA76423D3S
Typical Performance Curves (Continued)
1.2
VGS = VDS, ID = 250µA
1.0
1.2
ID = 250µA
1.1
0.8
1.0
0.6
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
3000
1000
CISS = CGS + CGD
COSS ≅ CDS + CGD
100
CRSS = CGD
VGS = 0V, f = 1MHz
20
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0.9
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 30V
8
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 20A
ID = 10A
0
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
350
VGS = 4.5V, VDD = 30V, ID = 20A
300
250
tr
200
150
td(OFF)
tf
100
50
0
0
td(ON)
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
200
VGS = 10V, VDD = 30V, ID = 20A
150
td(OFF)
100
tf
tr
50
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HUFA76423D3, HUFA76423D3S Rev. B
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HUFA76423D3S.PDF ] | |
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