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HUFA76413DK8T 반도체 회로 부품 판매점

N-Channel Logic Level UltraFET Power MOSFET 60V/ 4.8A/ 56m



Fairchild Semiconductor 로고
Fairchild Semiconductor
HUFA76413DK8T 데이터시트, 핀배열, 회로
January 2003
HUFA76413DK8T
N-Channel Logic Level UltraFET® Power MOSFET
60V, 4.8A, 56m
General Description
These N-Channel power MOSFETs are manufactured us-
ing the innovative UltraFET® process. This advanced pro-
cess technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding perfor-
mance. This device is capable of withstanding high energy
in the avalanche mode and the diode exhibits very low re-
verse recovery time and stored charge. It was designed for
use in applications where power efficiency is important,
such as switching regulators, switching convertors, motor
drivers, relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.
Applications
• Motor and Load Control
• Powertrain Management
Features
• 150°C Maximum Junction Temperature
• UIS Capability (Single Pulse and Repetitive Pulse)
• Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V
• Ultra-Low On-Resistance rDS(ON) = 0.056Ω, VGS = 5V
D1 (8) D1 (7)
D2 (6) D2 (5)
1
SO-8
S1 (1) G1 (2)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 25oC, VGS = 5V)
Continuous (TC = 125oC, VGS = 5V, RθJA = 228oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
S2 (3) G2 (4)
Ratings
60
±16
5.1
4.8
1
Figure 4
260
2.5
0.02
-55 to 150
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJA
RθJA
RθJA
Thermal Resistance Junction to Ambient SO-8 (Note 2)
Thermal Resistance Junction to Ambient SO-8 (Note 3)
Thermal Resistance Junction to Ambient SO-8 (Note 4)
50 oC/W
191 oC/W
228 oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
Rev. B


HUFA76413DK8T 데이터시트, 핀배열, 회로
Package Marking and Ordering Information
Device Marking
76413DK8
Device
HUFA76413DK8T
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 50V
VGS = 0V
TA = 150oC
VGS = ±16V
60
-
-
-
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 5.1A, VGS = 10V
ID = 4.8A, VGS = 5V
ID = 4.8A, VGS = 5V
TA = 150oC
1
-
-
-
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 30V
ID = 4.8A
Ig = 1.0mA
-
-
-
-
-
-
-
Switching Characteristics (VGS = 5V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr Rise Time
td(OFF)
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 30V, ID = 1A
VGS = 5V, RGS = 16
-
-
-
-
-
-
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
ISD = 4.8A
ISD = 2.4A
ISD = 4.8A, dISD/dt = 100A/µs
ISD = 4.8A, dISD/dt = 100A/µs
Notes:
1:
2:
3:
4:
SRRRtθθθaJJJrAAAtiniiisssg125T092J18o=CooCC2/W5//WW°Cw,hwwLehhn=eemnn20ommmuoonHuutnne, ttdIeeAoddSnoo=ann50aa.1.500A..i00n20276ciionnp22pcceoorpppppaeedrr
on FR-4 at 1
pad on FR-4
pad on FR-4
second.
at 1000
at 1000
seconds.
seconds.
-
-
-
-
Typ Max Units
- -V
-1
µA
- 250
- ±100 nA
-
0.041
0.048
3
0.049
0.056
0.091 0.106
V
620 -
pF
180 -
pF
30 - pF
18 23 nC
10 13 nC
0.6 0.8 nC
1.8 - nC
5 - nC
- 44 ns
10 - ns
19 - ns
45 - ns
27 - ns
- 108 ns
- 1.25 V
- 1.0 V
- 43 ns
- 55 nC
©2003 Fairchild Semiconductor Corporation
Rev. B




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N-Channel Logic Level UltraFET Power MOSFET 60V/ 4.8A/ 56m - Fairchild Semiconductor