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PDF HUFA76407DK8 Data sheet ( Hoja de datos )
| Número de pieza | HUFA76407DK8 | |
| Descripción | 3.5A/ 60V/ 0.105 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
HUFA76407DK8
December 2001
3.5A, 60V, 0.105 Ohm, Dual N-Channel,
Logic Level UltraFET® Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
Symbol
SOURCE1 (1)
GATE1 (2)
SOURCE2 (3)
GATE2 (4)
5
DRAIN 1 (8)
DRAIN 1 (7)
DRAIN 2 (6)
DRAIN 2 (5)
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.090Ω, VGS = 10V
- rDS(ON) = 0.105Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- SPICE and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76407DK8
MS-012AA
76407DK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76407DK8T.
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
(TA
(TA
(TA
=
=
=
122055o0oCCoC,, V,VVGGGSSS===1505VVV) ))(N((FNoiotgetue2re3) )2. )..
.......
(Note 2)
.......
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ID
ID
ID
Continuous (TA = 100oC, VGS = 4.5V) (Figure 2) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 125oC.
2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 1 second.
3. 228oC/W measured using FR-4 board with 0.006 in2 (3.87 mm2) copper pad at 1000 seconds.
HUFA76407DK8
60
60
±16
3.5
3.8
1.0
1.0
Figure 4
Figures 6, 17, 18
2.5
20
-55 to 150
300
260
UNITS
V
V
V
A
A
A
A
W
mW/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA76407DK8 Rev. B
1 page  
HUFA76407DK8
Typical Performance Curves (Continued)
1.2 1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.0 1.1
0.8 1.0
0.6
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1000
CISS = CGS + CGD
100
COSS ≅ CDS + CGD
10
VGS = 0V, f = 1MHz
5
0.1 1.0
CRSS = CGD
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
50
VGS = 4.5V, VDD = 30V, ID = 1.0A
40
30 td(OFF)
20
td(ON)
10
tr
tf
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
0.9
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 30V
8
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 3.8A
ID = 1.0A
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
80
VGS = 10V, VDD = 30V, ID = 3.8A
60
40
td(OFF)
tf
20
0
0
tr
td(ON)
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
HUFA76407DK8 Rev. B
5 Page 
SPICE Thermal Model
REV 1June 1999
HUFA76407DK8
Copper Area = 0.02 in2
CTHERM1 th 8 8.5e-4
CTHERM2 8 7 1.8e-3
CTHERM3 7 6 5.0e-3
CTHERM4 6 5 1.3e-2
CTHERM5 5 4 4.0e-2
CTHERM6 4 3 9.0e-2
CTHERM7 3 2 4.0e-1
CTHERM8 2 tl 1.4
RTHERM1 th 8 3.5e-2
RTHERM2 8 7 6.0e-1
RTHERM3 7 6 2
RTHERM4 6 5 8
RTHERM5 5 4 18
RTHERM6 4 3 39
RTHERM7 3 2 42
RTHERM8 2 tl 48
SABER Thermal Model
Copper Area = 0.02 in2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 8 = 8.5e-4
ctherm.ctherm2 8 7 = 1.8e-3
ctherm.ctherm3 7 6 = 5.0e-3
ctherm.ctherm4 6 5 = 1.3e-2
ctherm.ctherm5 5 4 = 4.0e-2
ctherm.ctherm6 4 3 = 9.0e-2
ctherm.ctherm7 3 2 = 4.0e-1
ctherm.ctherm8 2 tl = 1.4
rtherm.rtherm1 th 8 = 3.5e-2
rtherm.rtherm2 8 7 = 6.0e-1
rtherm.rtherm3 7 6 = 2
rtherm.rtherm4 6 5 = 8
rtherm.rtherm5 5 4 = 18
rtherm.rtherm6 4 3 = 39
rtherm.rtherm7 3 2 = 42
rtherm.rtherm8 2 tl = 48
}
COMPONENT
CTHERM6
CTHERM7
CTHERM8
RTHERM6
RTHERM7
RTHERM8
0.02 in2
9.0e-2
4.0e-1
1.4
39
42
48
HUFA76407DK8
th JUNCTION
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
RTHERM7
RTHERM8
8
7
6
5
4
3
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
CTHERM7
CTHERM8
tl AMBIENT
TABLE 1. THERMAL MODELS
0.14 in2
0.257 in2
1.3e-1
1.5e-1
6.0e-1
4.5e-1
2.5 2.2
26 20
32 31
35 38
0.38 in2
1.5e-1
6.5e-1
3
20
29
31
0.493 in2
1.5e-1
7.5e-1
3
20
23
25
©2001 Fairchild Semiconductor Corporation
HUFA76407DK8 Rev. B
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet HUFA76407DK8.PDF ] | |
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