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HUF75344P3 반도체 회로 부품 판매점

75A/ 55V/ 0.008 Ohm/ N-Channel UltraFET Power MOSFETs



Fairchild Semiconductor 로고
Fairchild Semiconductor
HUF75344P3 데이터시트, 핀배열, 회로
HUF75344G3, HUF75344P3, HUF75344S3S
Data Sheet
December 2001
75A, 55V, 0.008 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75344.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75344G3
TO-247
75344G
HUF75344P3
TO-220AB
75344P
HUF75344S3S
TO-263AB
75344S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75344S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- Thermal Impedance PSPICE and SABER Models
Available on the web at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3, HUF75344S3S Rev. B1


HUF75344P3 데이터시트, 핀배열, 회로
HUF75344G3, HUF75344P3, HUF75344S3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
55
55
±20
75
Figure 4
Figure 6
285
1.90
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
SYMBOL
BVDSS
IDSS
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
IGSS
VGS(TH)
rDS(ON)
RθJC
RθJA
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
tON
td(ON)
tr
td(OFF)
tf
tOFF
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
TEST CONDITIONS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
VGS = VDS, ID = 250µA (Figure 10)
ID = 75A, VGS = 10V (Figure 9)
(Figure 3)
TO-247
TO-220, TO-263
VDD = 30V, ID 75A,
RL = 0.4, VGS = 10V,
RGS = 3.0
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 75A,
RL = 0.4
Ig(REF) = 1.0mA
(Figure 13)
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
MIN TYP MAX UNITS
55 - - V
- - 1 µA
- - 250 µA
-
-
±100
nA
2-4
- 0.0065 0.008
V
- - 0.52 oC/W
- - 30 oC/W
- - 62 oC/W
- - 195 ns
- 16 -
ns
- 112 -
ns
- 37 -
ns
- 28 -
ns
- - 100 ns
-
175 210
nC
- 90 108 nC
-
5.9 7.0
nC
- 14 - nC
- 39 - nC
- 3200 -
- 1170 -
- 310 -
pF
pF
pF
©2001 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3, HUF75344S3S Rev. B1




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HUF75344P3 mosfet

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