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PDF HUF75344G3 Data sheet ( Hoja de datos )
| Número de pieza | HUF75344G3 | |
| Descripción | 75A/ 55V/ 0.008 Ohm/ N-Channel UltraFET Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HUF75344G3, HUF75344P3, HUF75344S3S
Data Sheet
January 2000 File Number 4402.7
75A, 55V, 0.008 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75344.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75344G3
TO-247
75344G
HUF75344P3
TO-220AB
75344P
HUF75344S3S
TO-263AB
75344S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75344S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Models
- Thermal Impedance PSPICE and SABER Models
Available on the WEB at: www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER is a Copyright of Analogy, Inc 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000.
1 page  
HUF75344G3, HUF75344P3, HUF75344S3S
Typical Performance Curves (Continued)
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 75A
2.0
1.2
1.0
VGS = VDS, ID = 250µA
1.5 0.8
1.0 0.6
0.5
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
0.4
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
4500
3000
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1.0
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 30V
8
1500
COSS
CRSS
0
0 10 20 30 40 50 60
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6
4
WAVEFORMS IN
DESCENDING ORDER:
2 ID = 75A
ID = 55A
ID = 35A
0 ID = 20A
0 25 50 75 100
Qg, GATE CHARGE (nC)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HUF75344G3.PDF ] | |
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