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HUF75329S3S 반도체 회로 부품 판매점

49A/ 55V/ 0.024 Ohm/ N-Channel UltraFET Power MOSFETs



Fairchild Semiconductor 로고
Fairchild Semiconductor
HUF75329S3S 데이터시트, 핀배열, 회로
HUF75329G3, HUF75329P3, HUF75329S3S
Data Sheet
December 2001
49A, 55V, 0.024 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75329G3
TO-247
75329G
HUF75329P3
TO-220AB
75329P
HUF75329S3S
TO-263AB
75329S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75329S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 49A, 55V
Ultra Low On-Resistance, rDS(ON) = 0.024
• Temperature Compensating PSPICE® and SABER™
Models
- Available on the web at: www.fairchildsemi.com
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75329G3, HUF75329P3, HUF75329S3S Rev. B


HUF75329S3S 데이터시트, 핀배열, 회로
HUF75329G3, HUF75329P3, HUF75329S3SOGM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
55 V
55 V
±20 V
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
49
Figure 4
Figures 6, 14, 15
128
0.86
-55 to 175
300
260
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 49A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
(Figure 3)
TO-247
TO-220, TO-263
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
tON
td(ON)
tr
td(OFF)
tf
tOFF
VDD = 30V, ID 49A,
RL = 0.61, VGS = 10V,
RGS = 9.1
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 49A,
RL = 0.61
Ig(REF) = 1.0mA
(Figure 13)
MIN TYP MAX UNITS
55 - - V
- - 1 µA
- - 250 µA
-
-
±100
nA
2-4V
- 0.020 0.024
- - 1.17 oC/W
- - 30 oC/W
- - 62 oC/W
- - 105 ns
- 12 -
ns
- 58 -
ns
- 33 -
ns
- 33 -
ns
- - 100 ns
- 60 75 nC
- 35 43 nC
-
2.0 2.5
nC
- 5 - nC
- 13 - nC
©2001 Fairchild Semiconductor Corporation
HUF75329G3, HUF75329P3, HUF75329S3S Rev. B




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