파트넘버.co.kr BFC40 데이터시트 PDF


BFC40 반도체 회로 부품 판매점

NCHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS



Seme LAB 로고
Seme LAB
BFC40 데이터시트, 핀배열, 회로
SEME
LAB
BFC40
TO247–AD Package Outline.
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
3.55 (0.140)
3.81 (0.150)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
123
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
5.25 (0.215)
BSC
VDSS
ID(cont)
RDS(on)
1500V
2A
8.00W
Pin 1 – Gate
Pin 2 – Drain Pin 3 – Source
VDSS
ID
IDM
VGS
PD
TJ , TSTG
ABSOLUTE MAXIMUM RATINGS (TAMB = 25°C unless otherwise stated)
Drain – Source Voltage
1500
Continuous Drain Current
2
Pulsed Drain Current
4
Gate – Source Voltage
±20
Total Power Dissipation
50
Operating and Storage Junction Temperature Range
–55 to +150
V
A
A
V
W
°C
ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise stated)
Characteristic
Test Conditions
BVDSS
Drain – Source Breakdown Voltage
VGS = 0V , ID = 1mA
RDS(ON) Drain – Source On State Resistance
VGS =10V , ID = 1A
IDSS Zero Gate Voltage Drain Current
VDS = 1200V , VGS = 0V
IGSS
Gate – Source Leakage Current
VGS = ±20V , VDS = 0V
VGS(off)
Cutoff Voltage
VDS = 10V , ID = 1.0mA
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 20V
f = 1MHz
ton Turn–on Time
VGS = 10V
toff Turn-off Time
ID = 1A
VSD Diode Forward Voltage
VGS = 0 , IS = 2A
|YFS|
Forward Transfer Admittance
VDS = 20V , ID = 1A
Min.
1500
1.5
1.0
Typ.
8.0
550
90
30
30
200
1.0
1.5
Max.
11.0
100
±100
3.5
1.5
Unit
V
W
mA
nA
V
pF
ns
V
S
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim. 2/96




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BFC40 mosfet

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