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PDF BF2040R Data sheet ( Hoja de datos )
| Número de pieza | BF2040R | |
| Descripción | Silicon N-Channel MOSFET Tetrode | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Silicon N-Channel MOSFET Tetrode
• For low noise , high gain controlled
input stages up to 1GHz
• Operating voltage 5 V
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BF2040...
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF2040
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF2040R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
BF2040W
SOT343 1=D 2=S 3=G1 4=G2 -
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS ≤ 76 °C, BF2040, BF2040R
TS ≤ 94 °C, BF2040W
Storage temperature
Channel temperature
Thermal Resistance
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Value
8
40
10
7
200
200
-55 ... 150
150
Parameter
Channel - soldering point1)
BF2040, BF2040R
BF2040W
Symbol
Rthchs
Value
≤ 370
≤ 280
1For calculation of RthJA please refer to Application Note Thermal Resistance
Marking
NFs
NFs
NFs
Unit
V
mA
V
mW
°C
Unit
K/W
1 2007-06-01
1 page  
BF2040...
Gate 1 current IG1 = ƒ(VG1S)
VDS = 5V
VG2S = Parameter
195
µA
165
150
135
120
105
90
75
60
45
30
15
00
0.4 0.8 1.2 1.6
2
4V
3.5V
3V
2.5V
2V
2.4 V 3.2
VG1S
Drain current ID = ƒ(VG1S)
VDS = 5V
VG2S = Parameter
28
mA
4V
24 3V
22
20
18
16
2V
14
12
10
8
1.5V
6
4
2
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 2
VG1S
Gate 1 forward transconductance
gfs = ƒ(ID)
VDS = 5V, VG2S = Parameter
45
mS
4V
35 3.5V
30 3V
25
2.5V
20 2V
15
10
5
00 4 8 12 16 20 24 28 32 mA 40
ID
Drain current ID = ƒ(VGG)
VDS = 5V, VG2S = 4V, RG1 = 80kΩ
(connected to VGG, VGG=gate1 supply voltage)
16
mA
12
10
8
6
4
2
00 1 2 3 V 5
VGG
5 2007-06-01
5 Page 
BF2040...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
11 2007-06-01
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BF2040R.PDF ] | |
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