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BF2040 반도체 회로 부품 판매점

Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BF2040 데이터시트, 핀배열, 회로
Silicon N-Channel MOSFET Tetrode
Preliminary data
For low noise, high gain controlled
input stages up to 1GHz
Operating voltage 5V
BF 2040
3
4
2
1 VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code Pin Configuration
BF 2040 NCs
Q62702-F1775
1 = S 2 = D 3 = G2 4 = G1
Package
SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, TS = 76 °C
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Rthchs
Value
14
40
10
7
200
-55 ...+150
150
Unit
V
mA
V
mW
°C
370
K/W
SSeemmicioconndduuctcotor rGGrorouupp
11
Jun1-90958--11919-081


BF2040 데이터시트, 핀배열, 회로
BF 2040
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Drain-source breakdown voltage
ID = 650 µA, -VG1S = 4 V, - VG2S = 4 V
V(BR)DS
- 12 - V
Gate 1 - source breakdown voltage
+IG1S = 10 mA, VG2S = 0 V, VDS = 0 V
Gate 2 - source breakdown voltage
±IG2S = 10 mA, VG1S = VDS = 0
+V(BR)G1SS - 8.5 -
+V(BR)G2SS - 8.5 -
Gate 1 source current
VG1S = 5 V, VG2S = 0 V
+IG1SS
- - 50 nA
Gate 2 source leakage current
VG2S = 5 V, VG1S = 0 V, VDS = 0 V
Drain current
VDS = 5 V, VG1S = 0 V, VG2S = 4 V
+IG2SS
I DSS
- - 50
- - - µA
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 40 k
I DSX
- 15 - mA
Gate 2-source pinch-off voltage
VDS = 5 V, ID = 20 µA
Gate 1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
VG2S(p)
VG1S(p)
0.3 0.6
0.3 0.7
-V
-
AC characteristics
Forward transconductance
VDS = 5 V, ID = 15 mA, VG2S = 4 V
Gate 1 input capacitance
VDS = 5 V, ID = 15 mA, VG2S = 4 V,
f = 1 MHz
gfs
Cg1ss
- 45 - mS
- 3.7 - pF
Output capacitance
VDS = 5 V, ID = 10 mA, VG2S = 4 V,
f = 1 MHz
Noise figure
VDS = 5 V, ID = 15 mA, f = 800 MHz
Cdss
F
- 2.3 -
- 2 - dB
SSeemmicioconndduuctcotor rGGrorouupp
22
Jun1-90958--11919-081




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제조업체: Siemens Semiconductor Group

( siemens )

BF2040 mosfet

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