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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode
Preliminary data
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
BF 2030
3
4
2
1 VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code Pin Configuration
BF 2030 NEs
Q62702-F1773
1 = S 2 = D 3 = G2 4 = G1
Package
SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, TS = 76 °C
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Rthchs
Value
14
40
10
7
200
-55 ...+150
150
Unit
V
mA
V
mW
°C
≤370
K/W
SSeemmicioconndduuctcotor rGGrorouupp
11
Mar1-19968--11919-081
BF 2030
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Drain-source breakdown voltage
ID = 650 µA, -VG1S = 4 V, - VG2S = 4 V
V(BR)DS
- 12 - V
Gate 1 - source breakdown voltage
+IG1S = 10 mA, VG2S = 0 V, VDS = 0 V
Gate 2 - source breakdown voltage
±IG2S = 10 mA, VG1S = VDS = 0
+V(BR)G1SS - 8.5 -
+V(BR)G2SS - 8.5 - V
Gate 1 source current
VG1S = 6 V, VG2S = 0 V
+IG1SS
- - 50 nA
Gate 2 source leakage current
VG2S = 8 V, VG1S = 0 V, VDS = 0 V
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4.5 V
+IG2SS
I DSS
- - 50
- - µA
Drain-source current
VDS = 5 V, VG2S = 4.5 , RG1 = 20 kΩ
I DSX
- 12 - mA
Gate 2-source pinch-off voltage
VDS = 5 V, ID = 100 µA
Gate 1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 200 µA
VG2S(p)
VG1S(p)
0.3 0.8
0.3 0.7
-V
-
AC characteristics
Forward transconductance
VDS = 5 V, ID = 10 mA, VG2S = 4 V,
f = 1 kHz
gfs
- 31 - mS
Gate 1 input capacitance
VDS = 5 V, ID = 10 mA, VG2S = 4 V,
f = 1 MHz
Output capacitance
VDS = 5 V, ID = 10 mA, VG2S = 4 V,
f = 1 MHz
Cg1ss
Cdss
- 3 - pF
- 2.1 -
Noise figure
VDS = 5 V, ID = 10 mA, f = 800 MHz
SSeemmicioconndduuctcotor rGGrorouupp
F
22
- 2 - dB
Mar1-19968--11919-081
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