파트넘버.co.kr AO3409 데이터시트 PDF


AO3409 반도체 회로 부품 판매점

P-Channel MOSFET



HOTTECH 로고
HOTTECH
AO3409 데이터시트, 핀배열, 회로
Plastic-Encapsulate Mosfets
FEATURES
The AO3409 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
D
G
S
AO3409
P-Channel MOSFET
1.Gate
2.Source
3.Drain
SOT-23
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
TA=25°C
T =70°C
Pulsed Drain Current C
Power Dissipation B
TA=25°C
TA=70°C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
TJ, TSTG
Maximum
-30
±20
-2.6
-2.2
-20
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ Max
70 90
100 125
63 80
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P4-P1


AO3409 데이터시트, 핀배열, 회로
Plastic-Encapsulate Mosfets
AO3409
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
gFS Forward Transconductance
VSD Diode Forward Voltage
IS Maximum Body-Diode Continuous Current
ID=-250 A, VGS=0V
-30
VDS=-30V, VGS=0V
-1
TJ=55°C
-5
VDS=0V, VGS= ±20V
±100
VDS=VGS ID=-250 A
-1.4 -1.9 -2.4
VGS=-10V, VDS=-5V
-20
VGS=-10V, ID=-2.6A
77 110
TJ=125°C
100 140
VGS=-4.5V, ID=-2A
125 180
VDS=-5V, ID=-2.6A
5
IS=-1A,VGS=0V
-0.8 -1
-1.5
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
197 240
42
26 37
3.5 7.2 11.0
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.3 5.2
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-2.6A
2.2 3
0.7
Qgd Gate Drain Charge
1.1
tD(on)
Turn-On DelayTime
7.5
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=5.8 ,
4.1
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
RGEN=3
11.8
3.8
trr Body Diode Reverse Recovery Time
IF=-2.6A, dI/dt=100A/ us
11.3 14
Qrr Body Diode Reverse Recovery Charge
IF=-2.6A, dI/dt=100A/ us
4.4
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Units
V
uA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P4-P2




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AO3409 mosfet

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