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WNM3019 반도체 회로 부품 판매점

MOSFET ( Transistor )



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WNM3019 데이터시트, 핀배열, 회로
WNM3019
Small Signal N-Channel, 30V, 0.2A, MOSFET
VDS (V) Typical Rds(on) (Ω)
1.2@ VGS=10V
30 1.4@ VGS=4.5V
1.9@ VGS=2.5V
ESD Rating: 2000V HBM
Descriptions
The WNM3019 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in small signal switch. Standard Product WNM3019
is Pb-free and Halogen-free.
WNM3019
Http://www.sh-willsemi.com
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
HBM ESD protection >2 kV
Small package SOT-523
Applications
Driver: Relay, Solenoid, Lamps,Hammers etc.
Power supply converters circuit
Load/Power Switching for potable device
19 = Device Code
* = Month (A~Z)
Marking
Order information
Device
WMN3019-3/TR
Package
Shipping
SOT-523 3000/Reel&Tape
Will Semiconductor Ltd.
1 2015/8/10 Rev. 1.0


WNM3019 데이터시트, 핀배열, 회로
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM3019
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
30
±20
0.25 0.23
0.20 0.18
0.37 0.31
0.24 0.20
0.22 0.20
0.17 0.16
0.28 0.23
0.18 0.15
1.0
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
t ≤ 10 s
Steady State
t ≤ 10 s
Steady State
Symbol
RθJA
RθJA
Steady State RθJC
Typical
285
340
385
455
260
Maximum
335
405
450
545
300
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380µs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd.
2 2015/8/10 Rev. 1.0




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WNM3019 mosfet

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