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WNM2046C 반도체 회로 부품 판매점

MOSFET ( Transistor )



WillSEMI 로고
WillSEMI
WNM2046C 데이터시트, 핀배열, 회로
WNM2046C
Single N-Channel, 20V, 0.6A, Power MOSFET
VDS (V)
20
Typical RDS(on) (Ω)
0.42 @ VGS =4.5V
0.58 @ VGS=2.5V
0.84 @ VGS=1.8V
Descriptions
The WPM2046C is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM2046C is Pb-free.
WNM2046C
Http://www.willsemi.com
G
S
D
DFN1006-3L
D
GS
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package DFN1006-3L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
Pin configuration (Top view)
6 = Device Code
* = Month(A~z)
Marking
Order information
Device
Package
Shipping
WNM2046C-3/TR DFN1006-3L 10K/Tape&Reel
Will Semiconductor Ltd. 1 2016/10/09- Rev.1.0


WNM2046C 데이터시트, 핀배열, 회로
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM2046C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 s Steady State
20
±10
0.6 0.55
0.48 0.44
0.32 0.27
0.21 0.18
0.57 0.52
0.45 0.42
0.29 0.25
0.18 0.16
1.4
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
t ≤ 10 s
Junction-to-Ambient Thermal Resistance a
Steady State
t ≤ 10 s
Junction-to-Ambient Thermal Resistance b
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
350
395
397
445
240
Maximum
390
455
435
505
280
Unit
°C/W
a. Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu.
b. Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu.
c. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%.
d. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
Will Semiconductor Ltd. 2 2016/10/09- Rev.1.0




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WNM2046C mosfet

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