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PDF WNM01N11 Data sheet ( Hoja de datos )

Número de pieza WNM01N11
Descripción MOSFET ( Transistor )
Fabricantes WillSEMI 
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No Preview Available ! WNM01N11 Hoja de datos, Descripción, Manual

WNM01N11
Single N-Channel, 110V, 1.8A, Power MOSFET
VDS (V)
110
Typical Rds(on) ()
0.230@ VGS=10V
0.250@ VGS=4.5V
WNM01N11
Http://www.sh-willsemi.com
Descriptions
The WNM01N11 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM01N11 is Pb-free and
Halogen-free.
SOT-23-6L
DDS
65 4
123
DDG
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Small package SOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
 
1N11 = Device Code
MA= Special Code
YW= Year&Week
Marking
Order information
Device
Package
Shipping
WNM01N11-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd.
1 2016/02/25 – Rev. 1.0

1 page




WNM01N11 pdf
10 f=1MV =0VZHGSCis
10
10
Crs
os
0 5 10 15-VDS
raitoSuceVn
lage(V)ot
02
450
400
f=1MHZ
VGS=0V
350 Ciss
300
250
200
150
100 Crss
50
Coss
0
0 5 10 15 20 25
VDS-Drain to Source Voltage (V)
Capacitance
80
TJ(Max)=150C
60 TA=25C
40
20
0
1E-4
1E-3
0.01 0.1
1
Pulse width (S)
10 100
Single pulse power
WNM01N11
2.0
T=25C
1.5
1.0 T=150C
0.5
0.0
0.0
T=-50C
0.2 0.4 0.6 0.8
VSD- Source to Drain Voltage(V)
1.0
Body diode forward voltage
10
1
0.1
0.01
0.1
1ms
Limited by R
DS(on)
DC
10ms
100ms
Bvdss Limit
1s
10s
1 10 100
V - Drain Source Voltage (V)
DS
*V >minimum V at which R is specified
GS GS DS(on)
Safe operating power
10
9 ID=1.5A
8
7
6
5
4
3
2
1
0
012
VDS=20V
V =40V
DS
V =80V
DS
VDS=60V
34567
Qg(nC)
Gate charge Characteristics
Will Semiconductor Ltd.
5 2016/02/25 – Rev. 1.0

5 Page










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