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Will Semiconductor |
WPM1483
Single P-Channel, -12V, -3.5A, Power MOSFET
VDS (V)
-12
Typical Rds(on) (Ω)
0.031@ VGS=–4.5V
0.040@ VGS=–2.5V
0.056@ VGS=–1.8V
Descriptions
The WPM1483 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit . Standard Product WPM1483 is Pb-free
and Halogen-free.
Features
WPM1483
Http//:www.sh-willsemi.com
SOT-23
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
W83
W=Willsemi
83= Device Code
*= Month (A~Z)
Marking
Order information
Device
Package
Shipping
WPM1483 -3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Aug, 2013 - Rev.1.0
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WPM1483
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
-12
±8
-3.5 -3.2
-2.9 -2.5
0.74 0.57
0.47 0.37
-3.4 -2.9
-2.7 -2.3
0.67 0.49
0.43 0.31
-10
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
Symbol
t ≤ 10 s
Steady State
RθJA
t ≤ 10 s
Steady State
RθJA
Steady State RθJC
Typical
140
180
155
212
63
Maximum
168
216
186
254
78
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380µs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Aug, 2013 - Rev.1.0
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