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PDF WNM6001 Data sheet ( Hoja de datos )
| Número de pieza | WNM6001 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNM6001
Single N-Channel, 60V, 0.50A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.4@ VGS=10V
60
1.7@ VGS=4.5V
ESD Rating:2000V HBM
Descriptions
The WNM6001 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM6001 is Pb-free and
Halogen-free.
WNM6001
Http//:www.sh-willsemi.com
SOT-23
D
3
12
GS
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin configuration (Top view)
3
W61*
12
W61 = Device Code
* = Month (A~Z)
Marking
Order information
Device
Package
Shipping
WNM6001-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Sep, 2013 - Rev.1.0
1 page  
WNM6001
40
f=1MHz
1
35
30 Ciss
25 0.1
20 -50oC
15 25oC
10 Coss 0.01
85oC
5
Crss
125oC
150oC
0
0
5 10 15 20 25 1E-3 0.4 0.6 0.8 1.0 1.2
V
DS
(V)
VSD-Source-to-Drain Voltage(V)
Capacitance
Body diode forward voltage
50
40
30
20
10
0
1E-4 1E-3 0.01
0.1 1
Time(s)
10
Single pulse power
1 Limit by Rdson*
100us
1ms
0.1 10ms
100ms
DC 1s
10s
0.01
TA=25C
Single Pulse
Bvdss Limit
1E-3
100 1000
0.1
1 10
V DS- Drain Source Voltage (V)
100
Safe operating power
10
VDD=30V ID=0.37A
8
6
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Q (nC)
g
Gate Charge Characteristics
Will Semiconductor Ltd. 5 Sep, 2013 - Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNM6001.PDF ] | |
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