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PDF WNMD6003 Data sheet ( Hoja de datos )
| Número de pieza | WNMD6003 | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNMD6003
Dual N-Channel, 60V, 0.30A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.4@ VGS=10V
60
1.7@ VGS=4.5V
ESD Rating:2000V HBM
Descriptions
The WNMD6003 is Dual N-Channel enhancem
-ent MOS Field Effect Transistor. Uses advanced
trench technology and design to provide excellent
RDS (ON) with low gate charge. This device is suitable
for use in DC-DC conversion, power switch and
charging circuit. Standard Product WNMD6003 is
Pb-free and Halogen-free.
WNMD6003
Http//:www.sh-willsemi.com
SOT-563
D1 G2 S2
6 54
1 23
S1 G1 D2
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-563
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin configuration (Top view)
6 54
60*
1 23
60 = Device Code
* = Month (A~Z)
Marking
Order information
Device
Package
Shipping
WNMD6003-6/TR SOT-563 3000/Reel&Tape
Will Semiconductor Ltd. 1 Sep, 2013 - Rev.1.0
1 page  
WNMD6003
40
1
35 ciss
coss
30 crss
25 0.1
20 -50oC
15 25oC
0.01 85oC
10 125oC
5 150oC
0 1E-3
0 5 10 15 20 25
0.4 0.6 0.8 1.0 1.2
V
sd
(V)
Vsd-Source-to-Drain Voltage(V)
Capacitance
Body diode forward voltage
1 Limit by Rdson*
1ms
0.1 10ms
DC 100ms
0.01 1s
10s
1E-3
0.1
TA=25C
Single Pulse
Bvdss Limit
1 10
VDS- Drain Source Voltage (V)
100
Single pulse power
10
8
VDD=30V ID=0.37A
Safe operating power
6
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Q (nC)
g
Gate Charge Characteristics
Will Semiconductor Ltd. 5 Sep, 2013 - Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNMD6003.PDF ] | |
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