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Will Semiconductor |
WNMD2179
WNMD2179
Dual N-Channel, 20V, 6.3A, Power MOSFET
www.sh-willsemi.com
VDS (V)
Rds(on) (ȍ)
0.0175@ VGS=4.5V
0.0195@ VGS=3.1V
20
0.0215@ VGS=2.5V
ESD Rating: 2000V HBM
Descriptions
The WNMD2179 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2179 is Pb-free.
Features
TSOT-23-6L
G1 D1/D2 G2
654
1 23
S1 D1/D2 S2
Pin configuration (Top view)
6 54
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package TSOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
2179
NDYW
123
2179
ND
Y
W
= Device Code
= Special Code
= Year
=Week(A~z)
Marking
Order information
Device
WNMD2179-6/TR
Package
Shipping
TSOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Oct, 2014 - Rev.1.0
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2179
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 s Steady State
20
±10
6.3 5.7
5.0 4.6
1.1 0.9
0.7 0.6
5.8 5.2
4.6 4.1
0.9 0.7
0.6 0.5
30
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
RșJA
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
RșJA
Junction-to-Case Thermal Resistance
Steady State RșJC
Dual Operation
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
RșJA
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
RșJA
Junction-to-Case Thermal Resistance
Steady State RșJC
Typical
90
110
105
133
60
94
115
110
138
63
Maximum
108
130
128
158
75
112
132
132
162
78
Unit
°C/W
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Oct, 2014 - Rev.1.0
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