파트넘버.co.kr WNMD2179 데이터시트 PDF


WNMD2179 반도체 회로 부품 판매점

Dual N-Channel MOSFET



Will Semiconductor 로고
Will Semiconductor
WNMD2179 데이터시트, 핀배열, 회로
WNMD2179
WNMD2179
Dual N-Channel, 20V, 6.3A, Power MOSFET
www.sh-willsemi.com
VDS (V)
Rds(on) (ȍ)
0.0175@ VGS=4.5V
0.0195@ VGS=3.1V
20
0.0215@ VGS=2.5V
ESD Rating: 2000V HBM
Descriptions
The WNMD2179 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2179 is Pb-free.
Features
TSOT-23-6L
G1 D1/D2 G2
654
1 23
S1 D1/D2 S2
Pin configuration (Top view)
6 54
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package TSOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
2179
NDYW
123
2179
ND
Y
W
= Device Code
= Special Code
= Year
=Week(A~z)
Marking
Order information
Device
WNMD2179-6/TR
Package
Shipping
TSOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Oct, 2014 - Rev.1.0


WNMD2179 데이터시트, 핀배열, 회로
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2179
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 s Steady State
20
±10
6.3 5.7
5.0 4.6
1.1 0.9
0.7 0.6
5.8 5.2
4.6 4.1
0.9 0.7
0.6 0.5
30
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
RșJA
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
RșJA
Junction-to-Case Thermal Resistance
Steady State RșJC
Dual Operation
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
RșJA
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
RșJA
Junction-to-Case Thermal Resistance
Steady State RșJC
Typical
90
110
105
133
60
94
115
110
138
63
Maximum
108
130
128
158
75
112
132
132
162
78
Unit
°C/W
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Oct, 2014 - Rev.1.0




PDF 파일 내의 페이지 : 총 7 페이지

제조업체: Will Semiconductor

( will )

WNMD2179 mosfet

데이터시트 다운로드
:

[ WNMD2179.PDF ]

[ WNMD2179 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


WNMD2171

Dual N-Channel MOSFET - Will Semiconductor



WNMD2172

Dual N-Channel MOSFET - Will Semiconductor



WNMD2173

Dual N-Channel MOSFET - Will Semiconductor



WNMD2174

Dual N-Channel MOSFET - Will Semiconductor



WNMD2176

MOSFET ( Transistor ) - WillSEMI



WNMD2178

MOSFET ( Transistor ) - WillSEMI



WNMD2179

Dual N-Channel MOSFET - Will Semiconductor