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Will Semiconductor |
WNMD2168
Dual N-Channel, 20V, 4.1A, Power MOSFET
VDS (V)
20
Rds(on) (Ω)
0.022@ VGS=4.5V
0.024@ VGS=3.1V
0.027@ VGS=2.5V
Descriptions
The WNMD2168 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNMD2168 is Pb-free.
WNMD2168
Http//:www.willsemi.com
TSSOP-8L
D1/D2 S2 S2 G2
8765
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package TSSOP-8L
1234
D1/D2 S1 S1 G1
Pin configuration (Top view)
8765
2168
YYWW
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Will Semiconductor Ltd.
1234
2168
YY
WW
=Logo
=Device Code
= Year
= Week
Marking
Order information
Device
Package
Shipping
WNMD2168-8/TR TSSOP-8L 3000/Reel&Tape
1 Jan, 2015 - Rev.1.1
Absolute Maximum ratings
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2168
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
+20
±10
5.1 4.1
3.8 3.5
1.1 0.9
0.7 0.6
4.1 3.6
3.5 3.0
0.9 0.7
0.55 0.45
25
-55~+150
260
-55~+150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
t ≤ 10 s
Steady State
t ≤ 10 s
Steady State
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
87
113
102
136
61
Maximum
110
129
132
161
75
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380µs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Jan, 2015 - Rev.1.1
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