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WNMD2167 반도체 회로 부품 판매점

Dual N-Channel MOSFET



Will Semiconductor 로고
Will Semiconductor
WNMD2167 데이터시트, 핀배열, 회로
WNMD2167
Dual N-Channel, 20V, 6.3A, Power MOSFET
VDS (V)
20
Typical Rds(on) (Ω)
0.016@ VGS=4.5V
0.018@ VGS=3.1V
0.020@ VGS=2.5V
Descriptions
The WNMD2167 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2167 is Pb-free.
WNMD2167
Http//:www.willsemi.com
SOT-23-6L
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin configuration (Top view)
6 54
2167
YYWW
1 23
2167 =
YY =
WW =
Device Code
Year
Week
Marking
Order information
Device
Package
Shipping
WNMD2167-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.2


WNMD2167 데이터시트, 핀배열, 회로
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2167
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±10
6.3 5.7
5.0 4.6
1.1 0.9
0.7 0.6
5.8 5.2
4.6 4.1
0.9 0.7
0.6 0.5
30
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
RθJA
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Dual Operation
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
RθJA
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Typical
76
115
92
135
63
79
118
96
138
66
Maximum
94
145
115
175
78
97
148
118
180
81
Unit
°C/W
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380µs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Jan, 2015 - Rev.1.2




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WNMD2167 mosfet

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