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WNMD2156 반도체 회로 부품 판매점

Dual N-Channel MOSFET



Will Semiconductor 로고
Will Semiconductor
WNMD2156 데이터시트, 핀배열, 회로
WNMD2156
Dual N-Channel, 20V, 6.5A, Power MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.019@ VGS=10V
0.021@ VGS=4.5V
0.025@ VGS=2.5V
0.033@ VGS=1.8V

Descriptions
The WNMD2156 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2156 is Pb-free.
WNMD2156
Http//:www.willsemi.com
TSSOP-8L
D1/D2 S2 S2 G2
8765
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package TSSOP-8L
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
1234
D1/D2 S1 S1 G1
Pin configuration (Top view)
8765
2156
YYWW
1234
2156
= Device Code
YY = Year
WW =Week
Marking
Order information
Device
Package
Shipping
WNMD2156-8/TR TSSOP-8L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Dec,2014 - Rev.1.2


WNMD2156 데이터시트, 핀배열, 회로
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2156
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
f8
6.5 5.7
5.2 4.5
1.3 1.0
0.8 0.6
5.9 5.2
4.7 4.2
1.1 0.8
0.7 0.5
25
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
RșJA
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
RșJA
Junction-to-Case Thermal Resistance
Steady State RșJC
Dual Operation
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
RșJA
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
RșJA
Junction-to-Case Thermal Resistance
Steady State RșJC
Typical
68
92
85
112
52
72
98
90
116
55
Maximum
90
120
110
140
68
95
125
115
145
70
Unit
°C/W
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Dec,2014 - Rev.1.2




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WNMD2156 mosfet

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