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WNM2030 반도체 회로 부품 판매점

N-Channel MOSFET



Will Semiconductor 로고
Will Semiconductor
WNM2030 데이터시트, 핀배열, 회로
WNM2030
WNM2030
Single N-Channel, 20V, 0.95A, Power MOSFET
Http://www.sh-willsemi.com
VDS (V)
20
Rds(on) (ȍ)
0.210@ VGS=4.5V
0.250@ VGS=2.5V
0.305@ VGS=1.8V
ESD Protected
Descriptions
The WNM2030 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM2030 is Pb-free.
SOT-723
D
3
12
GS
Pin configuration (Top view)
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-723
Applications
3
2*
1
2
2 = Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
Package
Shipping
WNM2030-3/TR SOT-723 8000/Reel&Tape
Will Semiconductor Ltd. 1 Sep, 2014 - Rev.1.5


WNM2030 데이터시트, 핀배열, 회로
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM2030
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
f6
0.95 0.88
0.76 0.71
0.43 0.37
0.28 0.24
0.80 0.75
0.64 0.60
0.31 0.27
0.20 0.17
1.5
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RșJA
RșJA
RșJC
Typical
225
270
330
390
230
Maximum
285
330
400
460
265
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380μs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Sep, 2014 - Rev.1.5




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WNM2030 mosfet

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