SUA70060E 반도체 회로 부품 판매점
N-Channel MOSFET
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 Vishay |
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SUA70060E
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.00610 at VGS = 10 V
100
0.00700 at VGS = 7.5 V
ID (A)
56.6
54.4
Qg (TYP.)
53.5 nC
Thin-Lead TO-220 FULLPAK
Ordering Information:
SUA70060E-E3 (lead (Pb)-free)
G DS
FEATURES
• ThunderFET® power MOSFET
• Qgd / Qgs ratio < 1 optimizes switching
characteristics
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
D
• Power supply
- Secondary synchronous rectification
- AC/DC switch-mode power supplies
• DC/DC converter
• Power tools
G
• Motor drive switch
• DC/AC inverter
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current (t = 100 μs)
IDM
Avalanche Current
Single Avalanche Energy a
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
PD
TJ, Tstg
LIMIT
100
± 20
56.6
45.2
240
50
125
39
25
-55 to +150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) b
Junction-to-Case (Drain)
Notes
a. Duty cycle 1 %.
b. When mounted on 1" square PCB (FR4 material).
SYMBOL
RthJA
RthJC
LIMIT
60
3.2
UNIT
°C/W
S16-1128-Rev. A, 06-Jun-16
1
Document Number: 65787
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SUA70060E
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 125 °C
VDS = 100 V, VGS = 0 V, TJ = 150 °C
VDS 10 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 7.5 V, ID = 20 A
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 50 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs VDS = 50 V, VGS = 10 V, ID = 30 A
Gate-Drain Charge c
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time c
td(on)
Rise Time c
Turn-Off Delay Time c
tr
td(off)
VDD = 50 V, RL = 1.67
ID 30 A, VGEN = 10 V, Rg = 1
Fall Time c
tf
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current (t = 100 μs)
ISM
Forward Voltage a
VSD IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Charge
IRM(REC)
IF = 30 A, dI/dt = 100 A/μs
Reverse Recovery Charge
Qrr
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
TYP.
MAX.
UNIT
100 -
-
V
2-4
-
-
± 100
nA
- -1
μA
- - 100
- - 2 mA
50 - - A
- 0.00505 0.00610
- 0.00540 0.00700
- 85 -
S
- 3300 -
- 1395 -
- 95 -
- 53.5 81
- 14.5 -
- 13.2 -
0.9 1.9 3.8
- 13 26
- 22 44
- 27 54
- 9 18
pF
nC
ns
- - 240 A
- 0.86 1.4 V
- 88 178 ns
- 5 10 A
-
220 440
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1128-Rev. A, 06-Jun-16
2
Document Number: 65787
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SUA70060E mosfet
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