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TSA60R070SFD 반도체 회로 부품 판매점

N-Channel MOSFET



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Truesemi
TSA60R070SFD 데이터시트, 핀배열, 회로
TSA60R070SFD
600V 47A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• Fast-Recovery body diode
• Extremely Low Reverse Recovery Charge
• 650V @TJ = 150
• Typ. RDS(on) = 60mΩ
• Ultra Low gate charge (typ. Qg = 170nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt Peak Diode Recovery dv/dt
(Note 3)
dvds/dt Drain Source voltage slope (Vds=480V)
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
600
47*
29*
140
±30
1135
9.3
1.72
40
80
391
-55 to +150
300
Value
0.32
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
V/ns
W
Unit
/W
/W
/W
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TSA60R070SFD 데이터시트, 핀배열, 회로
Electrical Characteristics TC = 25unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
Drain-Source Breakdown
Voltage
VGS = 0V, ID = 250µA,
TJ = 25
VGS = 0V, ID = 250µA,
TJ = 150
Breakdown Voltage
Temperature Coefficient
ID = 250µA, Referenced to
25
Zero Gate Voltage Drain
Current
VDS = 600V, VGS = 0V
TC = 25
-TC = 150
Gate-Body Leakage Current,
Forward
VGS = 30V, VDS = 0V
600
--
--
--
--
--
650
0.6
--
10
--
--
--
--
1
--
100
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
-- -- -100
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 23A
2.5 -- 4.5
-- 60 70
gFS
Forward Trans conductance VDS = 40V, ID = 25A
-- 30
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
-- 3100
-- 610
-- 15
--
--
--
Unit
V
V
V/
µA
µA
nA
nA
V
mΩ
S
pF
pF
pF
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 480V, ID = 23A
RG = 20Ω(Note 4)
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 480V, ID = 23A
Qgs
Gate-Source Charge
VGS = 10V (Note 4)
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 23A
trr
Reverse Recovery Time
VGS = 0V, IF = 23A
Qrr Reverse Recovery Charge diF/dt =100A/µs
Irrm
Peak Reverse Recovery
Current
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=9.3A, VDD=50V, Starting TJ=25
3. ISD≤23A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Essentially Independent of Operating Temperature Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
-- 16 -- ns
-- 12 -- ns
-- 83 -- ns
-- 5
-- ns
-- 170 -- nC
-- 21 -- nC
-- 87 -- nC
-- --
-- --
-- 0.9
-- 230
-- 3
-- 23
47
140
1.5
--
--
--
A
A
V
ns
µC
A
2
www.truesemi.com




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TSA60R070SFD mosfet

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