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TSA9N90M 반도체 회로 부품 판매점

N-Channel MOSFET



Truesemi 로고
Truesemi
TSA9N90M 데이터시트, 핀배열, 회로
TSA9N90M
900V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 9.0A,900V,Max.RDS(on)=1.40Ω @ VGS =10V
• Low gate charge(typical 52nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
EAR
IAR
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25
TC = 100
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Repetitive Avalanche current
(Note 1)
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
900
± 30
9.0
5.7
36
900
13
9
130
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient
Typ.
--
--
Max.
0.96
40
Units
V
V
A
A
A
mJ
mJ
A
W
Units
/W
/W
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com


TSA9N90M 데이터시트, 핀배열, 회로
Electrical Characteristics TC=25 unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 4.5 A
3.0 -- 5.0
-- 1.12 1.4
V
gfs Forward transfer conductance
VDS = 10V, ID = 4.5A (Note 4)
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
VGS = 0 V, ID = 250 uA
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS =- 30 V, VDS = 0 V
900
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 450 V, ID = 9.0 A,
RG = 25 Ω
(Note 4,5)
VDS = 720 V, ID = 9.0 A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 9 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 9.0A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=21.0mH, IAS=9.0A, VDD=50V, RG=25 Ω,Starting TJ=25
3. ISD≤9.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
--
--
--
--
--
9.2 --
-- --
-- 1
-- 100
-- 100
-- -100
2100
175
14
--
--
--
50 --
120 --
100 --
75 --
52 68
16 --
20 --
-- 9
-- 36
-- 1.4
550 --
6.5 --
S
V
uA
uA
nA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
ns
uC
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com




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