파트넘버.co.kr BF9028DND-A 데이터시트 PDF


BF9028DND-A 반도체 회로 부품 판매점

N-Channel MOSFET



BYD 로고
BYD
BF9028DND-A 데이터시트, 핀배열, 회로
BYD Microelectronics Co., Ltd.
BF9028DND-A
20V N-Channel MOSFET
General Description
The BF9028DND-A is a Dual N-Channel MOS Field Effect
Transistor, which is applied to electronic systems as a
power switch. This device has ESD-protection and low
resistance characteristics.
D D DD
87 6 5
Features
z VDS = 20V
z ID =6A
z Low on-state resistance
z RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A)
z RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A)
z RDS(on) = 20.0mΩ TYP(VGS = 3.0V, ID = 3.0A)
z RDS(on) = 23.0mΩ TYP(VGS = 2.5V, ID = 3.0A)
z Built-in G-S protection diode against ESD
z Lead Pb-free and Halogen-free
1 23 4
S1 G1 S2 G2
Absolute Maximum Ratings (Ta=25OC)
Parameter
Symbol Ratings Unit
Drain to Source Voltage
VDS
20 V
Gate to Source Voltage
VGS
±10 V
Drain Current (DC)
Drain Current (pulse)a
Maximun Power Dissipationb
ID(DC)
ID(pulse)
PD
6A
24 A
2.0 W
Channel Temperature
Tch
150
Storage Temperature
Tstg -55~+150
Notes a. PW<10us,Duty Cycle<1%,VGS=4.5V.
b. Mounted on ceramic substrate of 45 cm2x 2.2mm.
Caution: These values must not be exceeded under any conditions.
Remark: The diode connected between the gate and source of the transistor serves as a protector
against ESD. When this device actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be applied to this device.
Ordering Information
Part Number
Package
BF9028DND-A
DFN3*3-8L
Datasheet
ES-BYD-WDZCE03D-077 Rev.A/1
Page 1 of 6


BF9028DND-A 데이터시트, 핀배열, 회로
BYD Microelectronics Co., Ltd.
BF9028DND-A
Electrical Characteristics (TA = 25)
Characteristic
Symbol
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Threshold Voltage
Forward Transfer Admittance
IDSS
IGSS
VGS(th)
|yfs|
Drain to Source On-state Resistance RDS(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
Test Conditions
VDS= 20V,VGS=0V
VGS= ± 10V,VDS=0V
VDS=VGS,ID= 0.25mA
VDS= 10V, ID= 3A
VGS= 4.5V,ID= 3A
VGS= 3.8V,ID= 3A
VGS= 3.0V,ID= 3A
VGS= 2.5V,ID= 3A
VDS= 10V ,VGS=0V,f=1MHZ
VDS= 10V,ID= 3A,
VGS= 4.5V, RG=10
VDS= 16V,VGS= 4.5V,
ID=6A
IF=6A,VGS=0V
Min.
0.5
Typ.
0.8
4
16
17.5
20
23
1200
260
250
160
500
2600
1600
10
2.5
3.5
0.7
Max.
10
±10
1.5
22
24
26
30
1.2
Unit
µA
µA
V
S
m
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Datasheet
ES-BYD-WDZCE03D-077 Rev.A/1
Page 2 of 6




PDF 파일 내의 페이지 : 총 6 페이지

제조업체: BYD

( byd )

BF9028DND-A mosfet

데이터시트 다운로드
:

[ BF9028DND-A.PDF ]

[ BF9028DND-A 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BF9028DND-A

N-Channel MOSFET - BYD



BF9028DND-GE

N-Channel MOSFET - BYD