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BYD |
BYD Microelectronics Co., Ltd.
BF9028DND-A
20V N-Channel MOSFET
General Description
The BF9028DND-A is a Dual N-Channel MOS Field Effect
Transistor, which is applied to electronic systems as a
power switch. This device has ESD-protection and low
resistance characteristics.
D D DD
87 6 5
Features
z VDS = 20V
z ID =6A
z Low on-state resistance
z RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A)
z RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A)
z RDS(on) = 20.0mΩ TYP(VGS = 3.0V, ID = 3.0A)
z RDS(on) = 23.0mΩ TYP(VGS = 2.5V, ID = 3.0A)
z Built-in G-S protection diode against ESD
z Lead Pb-free and Halogen-free
1 23 4
S1 G1 S2 G2
Absolute Maximum Ratings (Ta=25OC)
Parameter
Symbol Ratings Unit
Drain to Source Voltage
VDS
20 V
Gate to Source Voltage
VGS
±10 V
Drain Current (DC)
Drain Current (pulse)a
Maximun Power Dissipationb
ID(DC)
ID(pulse)
PD
6A
24 A
2.0 W
Channel Temperature
Tch
150 ℃
Storage Temperature
Tstg -55~+150 ℃
Notes a. PW<10us,Duty Cycle<1%,VGS=4.5V.
b. Mounted on ceramic substrate of 45 cm2x 2.2mm.
Caution: These values must not be exceeded under any conditions.
Remark: The diode connected between the gate and source of the transistor serves as a protector
against ESD. When this device actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be applied to this device.
Ordering Information
Part Number
Package
BF9028DND-A
DFN3*3-8L
Datasheet
ES-BYD-WDZCE03D-077 Rev.A/1
Page 1 of 6
BYD Microelectronics Co., Ltd.
BF9028DND-A
Electrical Characteristics (TA = 25℃)
Characteristic
Symbol
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Threshold Voltage
Forward Transfer Admittance
IDSS
IGSS
VGS(th)
|yfs|
Drain to Source On-state Resistance RDS(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
Test Conditions
VDS= 20V,VGS=0V
VGS= ± 10V,VDS=0V
VDS=VGS,ID= 0.25mA
VDS= 10V, ID= 3A
VGS= 4.5V,ID= 3A
VGS= 3.8V,ID= 3A
VGS= 3.0V,ID= 3A
VGS= 2.5V,ID= 3A
VDS= 10V ,VGS=0V,f=1MHZ
VDS= 10V,ID= 3A,
VGS= 4.5V, RG=10Ω
VDS= 16V,VGS= 4.5V,
ID=6A
IF=6A,VGS=0V
Min.
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
0.8
4
16
17.5
20
23
1200
260
250
160
500
2600
1600
10
2.5
3.5
0.7
Max.
10
±10
1.5
—
22
24
26
30
—
—
—
—
—
—
—
—
—
—
1.2
Unit
µA
µA
V
S
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Datasheet
ES-BYD-WDZCE03D-077 Rev.A/1
Page 2 of 6
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