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PDF BF9028DNT Data sheet ( Hoja de datos )
| Número de pieza | BF9028DNT | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | BYD | |
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BYD Microelectronics Co., Ltd.
BF9028DNT
20V N-Channel MOSFET
85
General Description
The BF9028DNT is a dual N-channel MOS Field Effect Transistor,
which is applied to electronic systems as a power switch. This device
has ESD-protection and low resistance characteristics.
.
TSSOP-8
1 : drain1
2,3 : source1
4 : gate1
5: gate2
6,7 : source2
8 : drain2
Features
• Can be driven by a 2.3 V power source
• Low on-state resistance
RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A)
RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A)
RDS(on) = 22.0mΩ TYP(VGS = 2.5V, ID = 3.0A)
• Built-in G-S protection diode against ESD
• Lead Pb-free and Halogen-free
14
Absolute Maximum Ratings(TC = 25℃)
Symbol
VDS
ID
IDM
VGS
PD
TJ,Tstg
TL
Parameter
Drain-Source Voltage
Drain Current(continuous)at Tc=25℃
Drain Current (pulsed)
Gate-Source Voltage
Power Dissipation TC = 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
(Note a)
Value
20
6
24
±10
1.5
-55 to +150
150
Unit
V
A
A
V
W
℃
℃
Ordering Information
Part Number
BF9028DNT
Datasheet
Package
TSSOP-8
TS-MOS-PD-0050 Rev.A/0(2011.02.28)
Packaging
3000pcs Tape&Reel
Page 1 of 7
1 page  
BYD Microelectronics Co., Ltd.
BF9028DNT
Figure 13 Normalized Maximum Transient Thermal Impedance
1
D=0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.001
0.01 0.1
1
t1, Square Wave Pulse Duration [sec]
10
100
Package Drawing:
1000
Datasheet
TS-MOS-PD-0050 Rev.A/0(2011.02.28)
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BF9028DNT.PDF ] | |
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