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BF9035SNZ-M 반도체 회로 부품 판매점

N-Channel MOSFET



BYD 로고
BYD
BF9035SNZ-M 데이터시트, 핀배열, 회로
BYD Microelectronics Co., Ltd.
BF9035SNZ-M
30V N-Channel MOSFET
General Description
The BF9035SNZ-M is a Single N-channel MOS Field Effect
Transistor, which uses advanced trench technology
to provide excellent RDS(ON) and low gate charge.
This is applied to electronic systems as a power switch.
Features
z VDS=30 V
z ID=4A
z Low on-state resistance
RDS (on) <65m(VGS=10VID=2.0A)
RDS (on) < 80m(VGS=4.5VID=2.0A)
RDS (on) < 95m(VGS=3.0VID=2.0A)
z Lead Pb-free and Halogen-free
Absolute Maximum Ratings(TC = 25)
Symbol
VDS
ID
IDM
VGS
PD
TJ,Tstg
TL
Parameter
Drain-Source Voltage
Drain Current(continuous)at Tc=25
Drain Current (pulsed)
Gate-Source Voltage
Power Dissipation TC = 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
(Note a)
Value
30
4
16
±12
2.0
-55 to +150
150
Unit
V
A
A
V
W
Ordering Information
Part Number
BF9035SNZ-M
Package
SOT23-3
Datasheet
TS-MOS-PD-0062
Rev.A/0
Packaging
3000pcs Tape & Reel
Page 1 of 7


BF9035SNZ-M 데이터시트, 핀배열, 회로
BYD Microelectronics Co., Ltd.
BF9035SNZ-M
Electrical Characteristics (Tc = 25)
Symbol
BVDS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD(*)
Parameter
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-body Leakage Current
Gate Threshold Voltage
Static Drain-source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-source Charge
Gate-Drain Charge
Forward On Voltage
Test Conditions
ID=250uA,VGS=0V
VDS =24V, VGS =0V
VGS=±12V,VDS=0V
VDS=VGS, ID=250uA
VGS=3.0V,ID=2A
VGS=4.5V,ID=2A
VGS=10.0V,ID=2A
VDS=15V,f=1MHZ,VGS=0V
VDS=15V,ID=2A,
VGS=10V, RG=4.7
(Note b,c)
VDS=15V,ID=4A,VGS=4.5V
(Note b,c)
VGS=0V,IF=1A
Min.
30
0.6
Typ.
1
80
65
55
300
150
50
15
20
50
12
3.8
0.8
1.4
0.8
Notes
a: Repetitive Rating : Pulse width limited by maximum junction temperature
b: Pulse Test : Pulse width 300μs, Duty cycle 2%
c: Essentially independent of operating temperature
(*)Pulsed: Pulse duration
Caution: These values must not be exceeded under any conditions.
Max.
1
±100
1.4
95
80
65
1
Unit
V
uA
nA
V
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Datasheet
TS-MOS-PD-0062
Rev.A/0
Page 2 of 7




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