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PDF BF91404 Data sheet ( Hoja de datos )
| Número de pieza | BF91404 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | BYD | |
| Logotipo |  |
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BYD Microelectronics Co., Ltd.
BF91404
40V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize
input capacitance and gate charge. It is therefore suitable as
primary switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any applications with low
gate drive requirements.
Features
z VDS =40V
z ID =100A
z Typical RDS(ON) =2.5m Ω (VGS=10V,ID=50A)
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
Drain Current(continuous)at Tc=25℃
ID Drain Current(continuous)at Tc=100℃
IDM
Drain Current (package limited)
（Note1）
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
PD
Power Dissipation (TC = 25°C)
Power Dissipation (TC =100°C)
TJ,Tstg
TL
Operating junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
（Note2）
（Note1）
（Note1）
Value
40
100
90
400
±20
1300
40
25
400
220
-55 to +175
300
Unit
V
A
A
A
V
mJ
A
mJ
W
W
℃
℃
Datasheet
TS-MOS-PD-0061 Rev.A/0
Page 1 of 6
1 page  
BYD Microelectronics Co., Ltd.
Package Drawing
D
Φ
BF91404
A
C1
b1
b
Symbol
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
L
L1
Φ
e
e1
Dimensions In Millimeters
Min Max
4.45 4.55
2.38 2.42
0.70 0.90
1.42 1.62
0.45 0.55
1.25 1.35
9.85 9.95
9.11 9.29
12.85
12.95
2.540TYP
5.04 5.12
2.77 2.83
12.98
13.18
2.97 3.03
3.58 3.62
A1
C
Dimensions In Inches
Min Max
0.175
0.179
0.093
0.095
0.028
0.035
0.056
0.064
0.018
0.022
0.049
0.053
0.388
0.392
0.359
0.366
0.506
0.510
0.100TYP
0.198
0.202
0.109
0.111
0.511
0.519
0.117
0.119
0.141
0.143
Datasheet
TS-MOS-PD-0061 Rev.A/0
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BF91404.PDF ] | |
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