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PDF BF960NF06T Data sheet ( Hoja de datos )
| Número de pieza | BF960NF06T | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | BYD | |
| Logotipo |  |
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BYD Microelectronics Co., Ltd.
BF960NF06T
60V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize
input capacitance and gate charge. It is therefore suitable as
primary switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any application with low
gate drive requirement.
Features
z VDS =60 V
z ID =60A
z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A)
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
TO-252
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
PD Power Dissipation (TC = 25°C)
TJ,Tstg
Operating junction and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
（Note1）
（Note2）
（Note1）
Value
60
60
240
±20
215
38
138
-55 to +150
300
Unit
V
A
A
V
mJ
A
W
℃
℃
Datasheet
TS-MOS-PD-0052 Rev.A/0（2011-3-21）
Page 1 of 6
1 page  
BYD Microelectronics Co., Ltd.
Package Drawing
BF960NF06T
Symbol
A
B
b
b1
C
D
D1
E
e1
e2
L1
L2
L3
Dimensions In Millimeters
Min Max
2.2 2.4
1.3 1.5
0.55 0.65
0.46 0.56
0.46 0.56
6.4 6.6
5.2 5.4
5.4 6.15
2.25 2.35
4.5 4.7
9.25 10.2
0.95 1.45
0.7 0.9
Dimensions In Inches
Min
0.087
Max
0.094
0.051
0.059
0.022
0.026
0.018
0.022
0.018
0.022
0.252
0.260
0.205
0.212
0.212
0.242
0.089
0.093
0.177
0.185
0.346
0.402
0.037
0.057
0.028
0.035
Datasheet
TS-MOS-PD-0052 Rev.A/0（2011-3-21）
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BF960NF06T.PDF ] | |
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