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BF9060BSNL 반도체 회로 부품 판매점

N-Channel MOSFET



BYD 로고
BYD
BF9060BSNL 데이터시트, 핀배열, 회로
BYD Microelectronics Co., Ltd.
BF9060BSNL
60V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize
input capacitance and gate charge. It is therefore suitable as
primary switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any application with low
gate drive requirement.
Features
z VDS =60 V
z ID =100A
z Typical RDS(ON) =4.5 m (VGS=10V,ID=50A)
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
PD
TJ,Tstg
TL
Power Dissipation (TC = 25°C)
Operating junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
Note1
Note2
Note1
Value
60
100
400
±20
1900
35
310
-55 to +150
300
Unit
V
A
A
V
mJ
A
W
Datasheet
TS-MOS-PD-0065 Rev.A/0
Page 1 of 6


BF9060BSNL 데이터시트, 핀배열, 회로
BYD Microelectronics Co., Ltd.
Ordering Information
Part Number
BF9060BSNL
Package
TO-220
BF9060BSNL
Packaging
Tube
Thermal Data
Symbol Parameter
Rthj-Case Thermal Resistance Junction-Case
Rthj-Amb Thermal Resistance Junction-Ambient
Max.
0.4
60
Unit
/W
/W
Electrical Characteristics(Tc = 25)
Symbol Parameter
Test Conditions
Min.
V(BR)DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current
IGSS
Gate-Body Leakage
Current
ID=250uA, VGS=0V
VDS=60V, VGS=0V,Tc=25
VDS=60V,VGS=0V ,Tc=125
VGS=±20V ,VDS=0V
60
VGS(th)
RDS(on)
Ciss
Coss
Crss
Gate Threshold Voltage
Static Drain-Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS ,ID=250uA
VGS=10V ,ID=50A
VDS=25V,f=1MHZ,VGS=0V
2.0
td(on)
Turn-On Delay Time
tr
td(off)
Rise Time
Turn-Off Delay Time
VDD=30V, ID=30A
VGS=10V ,RG=4.7Ω (Note34
tf
Qg
Qgs
Qgd
VSD(*)
Trr
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Forward On Voltage
Reverse Recovery Time
VDS=48V, ID=80A
VGS=4.5V
Note34
ISD=80A ,VGS=0V
VDD=30V,IF=100A,di/dt=100A/us
Note3
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. VDD = 30V, L = 2mH, Starting TJ = 25°C
3. Pulse Test : Pulse width 300μs, duty cycle 2%
4. Essentially independent of operating temperature
(*)Pulsed:Pulse duration
Typ.
4.5
8144
812
90
52
87
137
65
90
30
45
70
Max.
1
10
Unit
V
uA
uA
±100 nA
4.0 V
7 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.5 V
ns
Datasheet
TS-MOS-PD-0065 Rev.A/0
Page 2 of 6




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