파트넘버.co.kr BF95N50T 데이터시트 PDF


BF95N50T 반도체 회로 부품 판매점

N-Channel MOSFET



BYD 로고
BYD
BF95N50T 데이터시트, 핀배열, 회로
BYD Microelectronics Co., Ltd.
BF95N50T/BF95N50L
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using VDMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
Features
z VDS =500 V
z ID=5A
z RDS(ON)1.60TYP(VGS=10V,ID=2.5A)
z Low CRSS (typical 7.8 pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
IAR Avalanche Current
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
(Note1)
(Note1)
(Note2)
(Note1)
(Note3)
BF95N50T BF95N50L
500
5
20
±30
5
220
6.9
5.0
69
-55 to +150
300
Unit
V
A
A
V
A
mJ
mJ
V/ns
W
°C
°C
Datasheet
TS-MOS-PD-0063Rev.A/3
Page 1 of 8


BF95N50T 데이터시트, 핀배열, 회로
BYD Microelectronics Co., Ltd.
Ordering Information
Part Number
BF95N50T
BF95N50L
Package
TO-252
TO-220
BF95N50T/ BF95N50L
Packaging
Tape&Reel
Tube
Thermal Data
Symbol Parameter
Rthj-case Thermal Resistance Junction- case
Rthj-amb Thermal Resistance Junction-ambient
BF95N50T
BF95/N50L
1.8
62.5
Unit
°C /W
°C /W
Electrical Characteristics(Tc = 25)
Symbol Parameter
Test Conditions
V(BR)DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current
IGSS
Gate-Body Leakage
Current
ID=250uA ,VGS=0V
VDS=500V ,VGS=0V
VDS=500V,VGS=0V,Tc=125
VGS=±30V, VDS=0V
VGS(th)
RDS(on)
Ciss
Coss
Crss
Gate Threshold Voltage
Static Drain-Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VGS=10V,ID =2.5A
VDS=25V,f=1MHZ,VGS=0V
td(on)
Turn-On Delay Time
tr
td(off)
Rise Time
Turn-Off Delay Time
VDD=250V, ID=2.5A
VGS=10V, RG=4.7Ω (Note4,5)
tf
Qg
Qgs
Qgd
VSD(*)
Trr
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Forward On Voltage
Reverse Recovery Time
VDD=400V, ID=5A
VGS=10V
(Note4,5)
IF=5A ,VGS=0V
IF=5A, di/dt=100A/us
(Note4)
Min.
500
2.0
Typ.
580
75
7.8
26
20
45
22
20
5
8
350
Max.
10
100
Unit
V
uA
uA
±100 nA
4.0 V
1.6
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
ns
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 20mH, IAS = 4.5 A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3. ISD 4.5A, di/dt 200A/μs, VDD BVDSS, Starting TJ Tjmax
4. Pulse Test : Pulse width 300μs, duty cycle 1.5%
5. Essentially independent of operating temperature
(*)Pulsed:Pulse duration
Datasheet
TS-MOS-PD-0063Rev.A/3
Page 2 of 8




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: BYD

( byd )

BF95N50T mosfet

데이터시트 다운로드
:

[ BF95N50T.PDF ]

[ BF95N50T 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BF95N50L

N-Channel MOSFET - BYD



BF95N50T

N-Channel MOSFET - BYD