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BYD |
BYD Microelectronics Co., Ltd.
BF92N60/BF92N60L/BF92N60R/BF92N60T
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V
z ID =2A
z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A)
z Low CRSS (typical 4.5pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
Tstg
TL
Drain-Source Voltage
Drain Current(continuous)at Tc=25°C
Drain Current (pulsed)
(Note1)
Gate-Source Voltage
SinglePulseAvalanche Energy
(Note2)
Avalanche Current
(Note1)
RepetitiveAvalancheEnergy
(Note1)
PeakDiodeRecoverydv/dt
(Note3)
Power Dissipation (TC = 25°C)
Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
BF92N60R/
BF92N60T
46
BF92N60L
600
2
8
±30
130
2.0
5.4
5
54
-55 to +150
300
BF92N60
24
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
°C
Datasheet
TS-MOS-PD-0006 Rev.A/3
Page 1 of 13
BYD Microelectronics Co., Ltd.
Ordering Information
Part Number
BF92N60
BF92N60L
BF92N60R
BF92N60T
Package
TO-220F
TO-220
TO-251
TO-252
BF92N60/BF92N60RL/BF92N60R /BF92N60T
Packaging
Tube
Tube
Tube
Tape&Reel
Thermal Data
Symbol Parameter
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
TO-251/TO-252
2.7
62.5
TO-220F
5.3
62.5
TO-220
2.3
62.5
Unit
°C /W
°C /W
Electrical Characteristics(Tc = 25℃)
Symbol Parameter
Test Conditions
V(BR)DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current
IGSS
Gate-Body Leakage
Current
ID=250uA VGS=0V
VDS=600V ,VGS=0V
VDS=600V,VGS=0V,Tc=125℃
VGS=±30V,VDS=0V
VGS(th)
RDS(on)
Ciss
Coss
Crss
Gate Threshold Voltage
Static Drain-Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS ,ID=250uA
VGS=10V ,ID=1.0A
VDS=25V,f=1MHZ,VGS=0V
td(on)
Turn-On Delay Time
tr
td(off)
Rise Time
Turn-Off Delay Time
VDD=300V,ID=1A
VGS=10V ,RG=4.7Ω (Note4,5)
tf
Qg
Qgs
Qgd
VSD(*)
Trr
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Forward On Voltage
Reverse Recovery Time
VDD=480V, ID=2A
VGS=10V
(Note4,5)
IS=2A VGS=0V
VDD=300V,IF=2A,di/dt=100A/us
(Note4)
Min.
600
2.0
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 60mH, IAS = 2 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300μs, duty cycle ≤ 2%
5. Essentially independent of operating temperature
(*).Pulsed:Pulse duration
Typ.
3.6
420
40
4.5
11
9.5
40
13
12
3
4
0.8
176
Max.
10
100
±100
4.0
4.2
1.2
Unit
V
uA
uA
nA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Datasheet
TS-MOS-PD-0006 Rev.A/3
Page 2 of 13
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