|
|
PDF BF94N60L Data sheet ( Hoja de datos )
| Número de pieza | BF94N60L | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | BYD | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BF94N60L (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
BYD Microelectronics Co., Ltd.
BF94N60/BF94N60L
600V N-Channel MOSFET
General Description
The N-Channel enhancement mode power field effect
transistor is produced using DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V
z ID =4A
z RDS(ON) =1.9 Ω TYP(VGS=10V ,ID=2A)
z Low CRSS (typical 7.0pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS SinglePulseAvalanche Energy
(Note2)
IAR Avalanche Current
(Note1)
EAR RepetitiveAvalancheEnergy
(Note1)
dv/dt
PeakDiodeRecoverydv/dt
(Note3)
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
BF94N60L
BF94N60
600
4
16
±30
170
4
6.2 3.7
5
62 37
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
°C
°C
Datasheet
TS-MOS-PD-0016 Rev.A/4
Page 1 of 11
1 page  
BYD Microelectronics Co., Ltd.
BF94N60/BF94N60L
Figure 11-1 Maximum Transient Thermal Impedance For BF94N60
10
D=0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL ）RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.0001
0.001
0.01
0.1
t1, Square Wave Pulse Duration [sec]
1
Figure 11-2 Maximum Transient Thermal Impedance For BF94N60L
10
10
D=0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL ）RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.0001
0.001
0.01
0.1
t1, Square Wave Pulse Duration [sec]
1
10
Datasheet
TS-MOS-PD-0016 Rev.A/4
Page 5 of 11
5 Page 
BYD Microelectronics Co., Ltd.
BF94N60/BF94N60L
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
BYD Microelectronics Co., Ltd. (short for BME) exerts the greatest possible effort to ensure high
quality and reliability. Nevertheless, semiconductor devices in general can malfunction or fail due to
their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing BME products, to comply with the standards of safety in making a safe design
for the entire system, including redundancy, fire-prevention measures, and malfunction prevention, to
prevent any accidents, fires, or community damage that may ensue. In developing your designs,
please ensure that BME products are used within specified operating ranges as set forth in the most
recent BME products specifications.
The BME products listed in this document are intended for usage in general electronics applications
(personal equipment, office equipment, domestic appliances, etc.). These BME products are neither
intended nor warranted for usage in equipment that requires extraordinarily high quality and/or
reliability or a malfunction or failure of which may cause loss of human life or bodily injury
(“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of BME
products listed in this document shall be made at the customer’s own risk.
BME is not responsible for any problems caused by circuits or diagrams described herein whose
related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any
specific mass-production design.
Datasheet
TS-MOS-PD-0016 Rev.A/4
Page 11 of 11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BF94N60L.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BF94N60 | N-Channel MOSFET | BYD |
| BF94N60L | N-Channel MOSFET | BYD |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |