파트넘버.co.kr BF94N60 데이터시트 PDF


BF94N60 반도체 회로 부품 판매점

N-Channel MOSFET



BYD 로고
BYD
BF94N60 데이터시트, 핀배열, 회로
BYD Microelectronics Co., Ltd.
BF94N60/BF94N60L
600V N-Channel MOSFET
General Description
The N-Channel enhancement mode power field effect
transistor is produced using DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V
z ID =4A
z RDS(ON) =1.9 TYP(VGS=10V ,ID=2A)
z Low CRSS (typical 7.0pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS SinglePulseAvalanche Energy
(Note2)
IAR Avalanche Current
(Note1)
EAR RepetitiveAvalancheEnergy
(Note1)
dv/dt
PeakDiodeRecoverydv/dt
(Note3)
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
BF94N60L
BF94N60
600
4
16
±30
170
4
6.2 3.7
5
62 37
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
°C
°C
Datasheet
TS-MOS-PD-0016 Rev.A/4
Page 1 of 11


BF94N60 데이터시트, 핀배열, 회로
BYD Microelectronics Co., Ltd.
Ordering Information
Part Number
BF94N60
BF94N60L
Package
TO-220F
TO-220
BF94N60/BF94N60L
Packaging
Tube
Tube
Thermal Data
Symbol Parameter
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220F
3.3
62.5
TO-220
2.0
62.5
Unit
°C /W
°C /W
Electrical Characteristics(Tc = 25)
Symbol Parameter
Test Conditions
V(BR)DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current
IGSS
Gate-Body Leakage
Current
ID=250uA ,VGS=0
VDS=600V ,VGS=0V
VDS=600V ,VGS=0V,Tc=125
VGS=±30V ,VDS=0V
VGS(th)
RDS(on)
Ciss
Coss
Crss
Gate Threshold Voltage
Static Drain-Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS ,ID=250uA
VGS=10V ,ID=2A
VDS=25V,f=1MHZ,VGS=0V
td(on)
Turn-On Delay Time
tr
td(off)
Rise Time
Turn-Off Delay Time
VDD=300V ID=2A
VGS=10V ,RG=4.7Ω (Note4,5)
tf
Qg
Qgs
Qgd
VSD(*)
Trr
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Forward On Voltage
Reverse Recovery Time
VDD=480V, ID=4A
VGS=10V
(Note4,5)
IF=4A VGS=0V
VDD=300V,IF=4A,di/dt=100A/us
(Note4)
Min.
600
2.0
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 20mH, IAS = 4A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3. ISD 4 A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300μs, Duty cycle 2%
5. Essentially independent of operating temperature
(*).Pulsed:Pulse duration
Typ.
1.9
550
60
7.0
20
17
47
18
20
5.0
5.7
0.8
280
Max.
10
100
Unit
V
uA
uA
±100 nA
4.0 V
2.5
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
ns
Datasheet
TS-MOS-PD-0016 Rev.A/4
Page 2 of 11




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