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PDF MDA0531E Data sheet ( Hoja de datos )
| Número de pieza | MDA0531E | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MDA0531E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MDA0531E
Common-Drain N-Channel Trench MOSFET 30V, 8A, 19mΩ
General Description
The MDA0531E uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent reliability. Low
RDS(ON) and low gate charge operation with gate voltage
as low as 2.5V.
Features
VDS = 30V
ID = 8.0A @ VGS = 10V
RDS(ON)
< 19mΩ @ VGS = 4.5V
< 20mΩ @ VGS = 4.0V
< 22mΩ @ VGS = 3.8V
< 25mΩ @ VGS = 3.1V
< 31mΩ @ VGS = 2.5V
Applications
Unidirectional or Bi-directional Load Switch
Lithium-Ion Battery Packs
Portable Battery Protection Module
Absolute Maximun Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulse Drain Current
Power Dissipation for Single Operation(1)
Junction and Storage Temperature Range
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State) (1)
Thermal Resistance, Junction-to-Case(2)
January 2010. Version 2.3
1
Symbol
VDSS
VGSS
ID
IDM
PDSM
TJ, Tstg
Rating
30
±12
8
6.5
65
1.7
1.0
-55~150
Units
V
V
A
A
A
W
oC
Symbol
RθJA
RθJC
Rating
75
6
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
2x5mm, 6 Leads, DFN
Dimensions are in millimeters, unless otherwise specified
January 2010. Version 2.3
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDA0531E.PDF ] | |
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