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PDF RU1H150R Data sheet ( Hoja de datos )
| Número de pieza | RU1H150R | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU1H150R
N-Channel Advanced Power MOSFET
Features
• 100V/150A,
RDS (ON) =3.5mΩ(Typ.)@VGS=10V
• Advanced SGT MOSFET Technology
• Ultra Low On-Resistance
• Excellent QgxRDS(on) Product
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Motor Drives
• Uninterruptible Power Supplies
• DC/DC converter
• General Purpose Applications
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
Pin Description
GDS
TO220
D
G
S
N-Channel MOSFET
Rating
Unit
TC=25°C
100
±20
175
-55 to 175
150
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
600
150
106
288
144
0.52
62.5
A
A
W
°C/W
°C/W
625 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2015
1
www.ruichips.com
1 page  
RU1H150R
Typical Characteristics
Output Characteristics
200
10V
150
9V
8V
7V
100
6V
50
5V
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
ID=75A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=3.5mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
10000
8000
Capacitance
Frequency=1.0MHz
Ciss
6000
4000
2000
0
1
Coss
Crss
10 100
VDS - Drain-Source Voltage (V)
1000
Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2015
5
Drain-Source On Resistance
20
15
10
5 VGS=10V
0
0
100
30 60 90 120
ID - Drain Current (A)
150
Source-Drain Diode Forward
10 TJ=175°C
TJ=25°C
1
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
10
9 VDS=50V
8 IDS=20A
7
6
5
4
3
2
1
0
0
Gate Charge
50 100
QG - Gate Charge (nC)
150
www.ruichips.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RU1H150R.PDF ] | |
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