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Número de pieza | RU12200R | |
Descripción | N-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU12200R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RU12200R
N-Channel Advanced Power MOSFET
Features
• 120V/200A,
RDS (ON) =5.8mΩ(Typ.)@VGS=10V
• Reliable and Rugged
• Ultra Low On-Resistance
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Uninterruptible Power Supplies
• Synchronus Rectification in DC/DC and AC/DC Converters
Pin Description
GDS
TO220
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
120
±25
175
-55 to 175
200
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
760 A
200
A
140
394
W
197
0.38 °C/W
62.5 °C/W
900 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2016
1
www.ruichips.com
1 page RU12200R
Typical Characteristics
Output Characteristics
200
10V
160
9V
8V
7V
120
80 6V
40 5V
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
ID=50A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=5.8mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
12000
10000
8000
Capacitance
Frequency=1.0MHz
Ciss
6000
4000
2000
0
1
Coss
Crss
10 100
1000
VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2016
5
Drain-Source On Resistance
20
15
10
VGS=10V
5
0
0
1000
40 80 120 160
ID - Drain Current (A)
200
Source-Drain Diode Forward
100
TJ=175°C
10
TJ=25°C
1
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
10
9 VDS=60V
8 IDS=20A
Gate Charge
7
6
5
4
3
2
1
0
0
50 100 150 200
QG - Gate Charge (nC)
250
www.ruichips.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RU12200R.PDF ] |
Número de pieza | Descripción | Fabricantes |
RU12200R | N-Channel Advanced Power MOSFET | Ruichips |
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