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Ruichips |
RU1HE3H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/3A,
RDS (ON) =135mΩ (Typ.) @ VGS=10V
RDS (ON) =150mΩ (Typ.) @ VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• ESD Protected
• Lead Free and Green Available
Pin Description
SOP-8
Applications
• Converters
• LED Backlight
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
Continuous Drain Current(VGS=10V)
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
100
±20
150
-55 to 150
3
①
9
3
2.4
2.5
1.6
50
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– JUL., 2011
www.ruichips.com
RU1HE3H
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1HE3H
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
100
V
IDSS Zero Gate Voltage Drain Current VDS= 100V, VGS=0V
TJ=85°C
1
µA
30
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
1.5 2 2.7 V
IGSS Gate Leakage Current
VGS=±16V, VDS=0V
±10 µA
③
RDS(ON)
Drain-Source On-state Resistance
VGS= 10V, IDS=3A
VGS= 4.5V, IDS=2A
135 150 mΩ
150 180 mΩ
Diode Characteristics
③
VSD
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
④
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
④
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=2.5A, VGS=0V
ISD=2.5A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 50V,
Frequency=1.0MHz
VDD=50V, RL=20Ω,
IDS=2.5A, VGEN= 10V,
RG=6Ω
VDS=80V, VGS= 10V,
IDS=2.5A
1.2 V
43 ns
78 nC
0.6 Ω
950
95 pF
40
13
40
ns
35
14
18 24
4 nC
5
Notes:
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t ≤10sec.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– JUL., 2011
2
www.ruichips.com
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