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N-Channel Advanced Power MOSFET



Ruichips 로고
Ruichips
RU1HE3H 데이터시트, 핀배열, 회로
RU1HE3H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/3A,
RDS (ON) =135m(Typ.) @ VGS=10V
RDS (ON) =150m(Typ.) @ VGS=4.5V
• Super High Dense Cell Design
Reliable and Rugged
• ESD Protected
• Lead Free and Green Available
Pin Description
SOP-8
Applications
Converters
LED Backlight
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
RθJA
Continuous Drain Current(VGS=10V)
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
100
±20
150
-55 to 150
3
9
3
2.4
2.5
1.6
50
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– JUL., 2011
www.ruichips.com


RU1HE3H 데이터시트, 핀배열, 회로
RU1HE3H
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1HE3H
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
100
V
IDSS Zero Gate Voltage Drain Current VDS= 100V, VGS=0V
TJ=85°C
1
µA
30
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
1.5 2 2.7 V
IGSS Gate Leakage Current
VGS=±16V, VDS=0V
±10 µA
RDS(ON)
Drain-Source On-state Resistance
VGS= 10V, IDS=3A
VGS= 4.5V, IDS=2A
135 150 m
150 180 m
Diode Characteristics
VSD
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=2.5A, VGS=0V
ISD=2.5A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 50V,
Frequency=1.0MHz
VDD=50V, RL=20,
IDS=2.5A, VGEN= 10V,
RG=6
VDS=80V, VGS= 10V,
IDS=2.5A
1.2 V
43 ns
78 nC
0.6
950
95 pF
40
13
40
ns
35
14
18 24
4 nC
5
Notes:
Pulse width limited by safe operating area.
When mounted on 1 inch square copper board, t 10sec.
Pulse test ; Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– JUL., 2011
2
www.ruichips.com




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