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RU1HC2H 반도체 회로 부품 판매점

N-Channel Advanced Power MOSFET



Ruichips 로고
Ruichips
RU1HC2H 데이터시트, 핀배열, 회로
RU1HC2H
Complementary Advanced Power MOSFET
MOSFET
Features
• N-Channel
100V/3.5A,
RDS (ON) =75m(Typ.) @ VGS=10V
RDS (ON) =80m(Typ.) @ VGS=4.5V
• P-Channel
-100V/-2.5A,
RDS (ON) =155m(Typ.) @ VGS=-10V
RDS (ON) =175m(Typ.) @ VGS=-4.5V
Reliable and Rugged
• ESD Protected
• Lead Free and Green Available
Applications
Power Management in Notebook
Computer.
Pin Description
SOP-8
Absolute Maximum Ratings
Complementary MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current TA=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested TA=25°C
ID
PD
RθJA
Continuous Drain Current
(VGS=±10V)
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
N -Channel P Channel
100
±20
150
-55 to 150
3.5
-100
±20
150
-55 to 150
-2.5
14
-10
3.5 -2.5
2.9 -2
2
1.3
62.5
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2012
www.ruichips.com


RU1HC2H 데이터시트, 핀배열, 회로
RU1HC2H
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS
VGS=0V,IDS=250µA
Drain-Source Breakdown Voltage VGS=0V,IDS=-250µA
VDS=100V, V GS=0V
TJ=85°C
IDSS Zero Gate Voltage Drain Current
VDS=-100V, V GS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS,IDS=250µA
VDS=VGS,IDS=-250µA
IGSS Gate Leakage Current
VGS=±20V, VDS=0V
VGS=±16V, VDS=0V
N
P
N
P
N
P
N
P
VGS=10V, IDS=2A
RDS(ON)
VGS=4.5V, IDS=1.5A
Drain-Source On-state Resistance
VGS=-10V, IDS=-2A
VGS=-4.5V, IDS=-1.5A
N
P
RU1HC2H
Min. Typ. Max.
100
-100
1.2
-1.5
1
30
-1
-30
2.5
-2.7
±10
±10
75 80
80 85
155 160
175 180
Unit
V
µA
V
µA
µA
m
Diode Characteristics
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD=1A, VGS=0V
ISD=-1A, VGS=0V
N-Channel
ISD=3.5A,
dlSD/dt=100A/µs
P-Channel
ISD=-2.5A,
dlSD/dt=100A/µs
N
P
N
P
N
P
1.2
-1.2
42
52
43
75
V
V
ns
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2012
2
www.ruichips.com




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RU1HC2H mosfet

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N-Channel Advanced Power MOSFET - Ruichips