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Ruichips |
RU1H35L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/40A,
RDS (ON) =21mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-252
Applications
• High Speed Power Switching
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
100
±25
175
-55 to 175
40
①
160
②
40
30
97
48
1.55
90
Unit
V
°C
°C
A
A
A
W
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– FEB., 2011
www.ruichips.com
RU1H35L
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1H35L
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
④
RDS(ON)
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
VGS=0V, IDS=250µA
VDS= 100V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS= 10V, IDS=16A
100
2
V
1
µA
10
34V
±100 nA
21 25 mΩ
Diode Characteristics
④
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
⑤
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
⑤
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=16A, VGS=0V
ISD=16A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 25V,
Frequency=1.0MHz
VDD=50V, RL=30Ω,
IDS=16A, VGEN= 10V,
RG=4.7Ω
VDS=80V, VGS= 10V,
IDS=16A
0.8 1.2 V
100 ns
430 nC
2.8
2100
250
115
22
76
60
23
Ω
pF
ns
44
10 nC
21
Notes:
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature.
Limited by TJmax, IAS =19A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– FEB., 2011
2
www.ruichips.com
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