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N-Channel Advanced Power MOSFET



Ruichips 로고
Ruichips
RU1H35L 데이터시트, 핀배열, 회로
RU1H35L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/40A,
RDS (ON) =21mΩ(Typ.)@VGS=10V
Super High Dense Cell Design
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-252
Applications
• High Speed Power Switching
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
100
±25
175
-55 to 175
40
160
40
30
97
48
1.55
90
Unit
V
°C
°C
A
A
A
W
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– FEB., 2011
www.ruichips.com


RU1H35L 데이터시트, 핀배열, 회로
RU1H35L
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1H35L
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
VGS=0V, IDS=250µA
VDS= 100V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS= 10V, IDS=16A
100
2
V
1
µA
10
34V
±100 nA
21 25 m
Diode Characteristics
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=16A, VGS=0V
ISD=16A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 25V,
Frequency=1.0MHz
VDD=50V, RL=30,
IDS=16A, VGEN= 10V,
RG=4.7
VDS=80V, VGS= 10V,
IDS=16A
0.8 1.2 V
100 ns
430 nC
2.8
2100
250
115
22
76
60
23
pF
ns
44
10 nC
21
Notes:
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature.
Limited by TJmax, IAS =19A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– FEB., 2011
2
www.ruichips.com




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RU1H35L mosfet

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